CBRHDSH1-200
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-200
is a full wave bridge rectifier in a durable surface mount
epoxy molded case, designed for high voltage full wave
rectification applications. The molding compound used in
this device has UL flammability classification 94V-O.
MARKING CODE: CSH120
HD DIP CASE
APPLICATIONS:
•
Input rectification for LED lighting
•
Power over ethernet (PoE) peripherals
•
General purpose full wave rectification
FEATURES:
•
Low forward voltage (0.76V TYP @ 1.0A)
•
Low leakage current (0.2μA TYP @ 200V)
•
High current rating: 1.0A
•
High voltage rating: 200V
SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
PD
TJ
Tstg
Θ
JA
UNITS
V
V
V
A
A
W
°C
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
200
200
140
1.0
20
1.2
-50 to +125
-50 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
VR=200V
0.2
IR
VR=200V, TA=100°C
BVR
VF
IR=100μA
IF=1.0A
200
220
760
MAX
50
20
900
UNITS
μA
mA
V
mV
R1 (5-January 2012)
CBRHDSH1-200
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CSH120
R1 (5-January 2012)
w w w. c e n t r a l s e m i . c o m
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