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DTA114TUA

Description
PNP Digital Transistor
CategoryDiscrete semiconductor    The transistor   
File Size91KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTA114TUA Overview

PNP Digital Transistor

DTA114TUA Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instruction,
Reach Compliance Codecompli
Is SamacsysN
Base Number Matches1
DTA114 TM/TE/TUA/TCA/TSA
PNP Digital Transistor
Small Signal Diode
Features
Built-in
bias resistors enable the configuration of an
inverter circuit without connecting external input resistor
(see equivalent circuit).
The
bias resistors consist of thin -film resistors with
complete isolation to allow negative biasing of the
input.They also have the advantage of almost
completely eliminating parasitic effects.
Only
the on/off conditions need to be set for
operation,marking device design easy.
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
3
SOT-723/SOT-523
SOT-323/SOT-23
Ordering Information
Package
SOT-723
SOT-523
SOT-323
SOT-23
TO-92S
Part No.
DTA114 TM
DTA114 TE
Packing
8K / 7" Reel
3K / 7" Reel
Marking
94
94
94
94
1
2
1.IN
2.GND
3.OUT
TO-92S
1.GND
2.OUT
1
2
3.IN
3
DTA114 TUA 3K / 7" Reel
DTA114 TCA 3K / 7" Reel
DTA114 TSA 3K / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Value
TUA TCA
200
-50
-50
-5
-100
-55 to + 150
Type Number
Power Dissipation
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Symbol
PD
V
CBO
V
CEO
V
EBO
I
C
TJ, T
STG
TM
100
TE
150
TSA
300
Units
mW
V
V
mA
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min
V
(BR)CBO
-50
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
100
7
-50
-5
Typ
Max
Condtion
Ic=-50µA,I
E
=0
Ic=-1mA,I
B
=0
I
E
=-50µA,I
C
=0
Unit
V
V
V
μA
μA
V
KΩ
-0.5
-0.5
-0.3
250
10
250
600
13
V
CB
=-50V,I
E
=0
V
EB
=-4V,I
C
=0
I
C
=-10mA,I
B
=-1mA
V
CE
=-5V,I
C
=-1mA
V
CE
=-10V,I
E
=-5mA, f=100MHz
MHz
Version:B12

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