DTC114 EM/EE/EUA/ECA/ESA
Taiwan Semiconductor
Small Signal Product
NPN Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
- Only the on/off conditions need to be set for
operation, marking device design easy.
- Packing code with suffix "G" means
green compound (halogen-free)
Equivalent Circuit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
SYMBOL
P
D
V
CC
V
IN
I
O
I
C(MAX)
T
J
, T
STG
EM
100
EE
150
VALUE
EUA / ECA
200
50
-10
½
+40
50
100
-55 to + 150
ESA
300
UNIT
mW
V
V
mA
°C
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
SYMBOL
V
I(on)
V
I(off)
V
O(on)
I
I
I
O（off)
G
I
R
1
R
2
/R
1
f
T
MIN
-
0.5
-
-
-
30
7
0.8
-
TYP
-
-
-
-
-
-
10
1
250
MAX
3
-
0.3
0.88
0.5
-
13
1.2
-
V
O
=10V,I
O
=5mA,f=100MHz
MHz
CONDITION
V
CC
=5V,I
O
=100μA
V
O
=0.3V,I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V,V
I
=0
V
O
=5V,I
O
=5mA
KΩ
UNIT
V
V
mA
μA
Document Number: DS_S1412029
Version: C14
DTC114 EM/EE/EUA/ECA/ESA
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25
o
C unless otherwise noted)
On Characteristics
100.0
V
O
=0.3V
T
a
=100
o
C
Output Current I
O
(mA)
1.00
10.00
V
CC
=5V
Off Characteristics
Input Voltage V
I(ON)
(V)
10.0
T
a
=25
o
C
1.0
T
a
=100
o
C
T
a
=25
o
C
0.10
0.1
0.1
1.0
10.0
100.0
0.01
0.0
0.4
0.8
1.2
1.6
2.0
Output Current I
O
(mA)
Input Voltage V
I(OFF)
(V)
V
O(ON)
—— I
O
1.00
I
O
/I
I
=20
1000
V
O
=5V
G
I
—— I
O
Output Voltage V
O(ON)
(V)
100
T
a
=100
o
C
T
a
=25
o
C
DC Current Gain G
I
T
a
=100
o
C
0.10
T
a
=25
o
C
10
0.01
1.0
10.0
Output Current I
O
(mA)
100.0
1
0.1
1.0
10.0
100.0
Output Current I
O
(mA)
C
O
—— V
R
10
f=1MHz
T
a
=25
o
C
Power Dissipation P
D
(mW)
400
350
DTC114ESA
300
250
200
150
100
50
0
0
25
50
DTC114EM
P
D
—— T
a
8
Output Capacitance C
O
(pF)
6
DTC114EUA/C
4
DTC114EE
2
0
0
4
8
12
16
20
Reverse Bias Voltage V
R
(V)
75
100
125
150
Ambient Temperature T
a
(℃)
Document Number: DS_S1412029
Version: C14
DTC114 EM/EE/EUA/ECA/ESA
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
DTC114EM
DTC114EE
DTC114EUA
DTC114ECA
DTC114ESA
-xx
PART NO.
SUFFIX
(Note 1)
PACKING CODE
RM
RS
RV
RU
A3
B3
G
PACKING CODE
SUFFIX
PACKAGE
SOT-723
SOT-523
SOT-323
SOT-23
TO-92S
PACKING
8K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / Box (Ammo)
10K / Box (Bulk)
Note 1: Part No. Suffix „-xx “ would be used for special requirement
EXAMPLE
PREFERRED
PART NO.
DTC114EE RS
PART NO.
DTC114EE
PART NO.
SUFFIX
PACKING CODE
RS
PACKING CODE
SUFFIX
DESCRIPTION
Multiple manufacture
source
G
Multiple manufacture
source
Green compound
Defined manufacture
source
Green compound
DTC114EE RSG
DTC114EE
RS
DTC114EE-M0 RSG
DTC114EE
M0
RS
G
PIN CONNENCTIONS AND MARKING
MARKING:
C114
E041
MARKING(HF):
C114
E·041
Document Number: DS_S1412029
Version: C14
RF/Wirelessly
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