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SI1400DL_15

Description
N-Channel 20 V (D-S) MOSFET
File Size249KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

SI1400DL_15 Overview

N-Channel 20 V (D-S) MOSFET

Si1400DL
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
(Ω)
0.150 at V
GS
= 4.5 V
0.235 at V
GS
= 2.5 V
I
D
(A)
1.7
1.3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
D
1
6
D
Marking Code
ND
D
2
5
D
XX
YY
Lot Traceability
and Date Code
Part # Code
G
3
4
S
Top View
Ordering Information:
Si1400DL-T1-E3 (Lead (Pb)-free)
Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.8
0.625
0.40
- 55 to 150
1.7
1.2
5
0.8
0.568
0.295
W
°C
5s
20
± 12
1.6
1.0
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
165
180
105
Maximum
200
220
130
°C/W
Unit
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
www.vishay.com
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