BC817-16W/25W/40W
Taiwan Semiconductor
Small Signal Product
200mW, PNP Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOT- 323 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.005 grams (approximately)
SOT-323
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature Range
Notes: 1. Transistor mounted on a FR4 printed-circuit board
SYMBOL
P
D
V
CBO
V
CEO
V
EBO
I
C
R
θJA
T
J
, T
STG
VALUE
200
50
45
5
0.5
625
-55 to + 150
UNIT
mW
V
V
V
A
K/W
°C
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Transition Frequency
at I
C
= 10
µA
at I
C
= 10 mA
at I
E
= 10
µA
at V
CB
= 20 V
at V
EB
= 5 V
at I
C
= 500mA
I
B
= 50 mA
V
CE
= 5 V I
C
= 10 mA f = 100MHz
at V
CE
= 1 V , I
C
= 100 mA
-16W
DC Current Gain
at V
CE
= 1 V , I
C
= 500 mA
-25W
-40W
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
f
T
MIN
50
45
5
-
-
-
100
100
MAX
-
-
-
100
100
0.7
-
250
400
600
UNIT
V
V
V
nA
nA
V
MHz
h
FE
160
250
40
Document Number: DS_S1404010
Version: C14
BC817-16W/25W/40W
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig.1Total Power Dissipation P
tot
=
f (T
S
)
300
250
100.0
P
tot
(mW)
200
150
100
50
0
0
20
40
60
80
T
S
(
o
C)
100
120
140
0.1
1
10
100
1000
tp (µs)
10000
100000 1000000
R
θJA
(K/W)
1000.0
Fig.2 Permissible Pulse Load R
θJA
=
f (tp)
10.0
0.5
0.2
0.1
0.05
0.02
0.01
D=0
1.0
Fig.3 Permissible Pulse Load
P
totmax
/ P
totDC
=
f (tp)
1000
D=0
10000
100
P
totmax
/P
totDC
0.005
0.01
0.02
0.05
100000
Fig. 4 Coolector Cutoff Current I
CBO
=
f (T
A
)
V
CB
=25V
max
I
CBO
(nA)
1000
10
0.1
0.2
1
1.E+00
0.5
1.E+01
1.E+02
1.E+03
tp
tp (s)
(µs)
1.E+04
1.E+05
1.E+06
100
typ
10
1
0
50
T
A
(
o
C)
100
150
Document Number: DS_S1404010
Version: C14
BC817-16W/25W/40W
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig.5 DC Current Gain h
FE
=
f (I
C
)
V
CE
= 1V
1000
100
o
C
f
T
(MHz)
h
FE
100
25
o
C
-50
o
C
100
10
1000
Fig. 6 Transition Frequency f
T
=
f (I
C
)
V
CE
= 5 V
1
0.1
1.0
10.0
I
C
(mA)
100.0
1000.0
10
1
10
I
C
(mA)
100
1000
Fig. 7 Base-Emitter Saturation Voltage
I
C
=
f (V
BEsat
),
h
FE
= 10
1000.0
150
o
C
100.0
I
C
(mA)
10.0
25
o
C
-50
o
C
1000.0
150
o
C
100.0
I
C
(mA)
10.0
Fig. 8 Collector-Emitter Saturation
Voltage
25
o
C
-50
o
C
1.0
1.0
0.1
0
1
2
V
BEsat
(V)
3
4
0.1
0.0
0.2
0.4
V
CEsat
(V)
0.6
0.8
Document Number: DS_S1404010
Version: C14
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