DST847BPDP6
45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963
Features
NPN & PNP Complementary SS
BV
CEO
> 45V
I
C
= 100mA High Collector Current
P
D
= 300mW Power Dissipation
1mm
2
Package Footprint, 5 times smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (Approximate)
SOT-963
6
5
4
Q1
Q2
1
2
3
Top View
Device Schematic
Ordering Information
(Note 4)
Device
DST847BPDP6-7
Notes:
Compliance
AEC-Q101
Marking
TC
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-963
TC
TC = Product Type Marking Code
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
1 of 9
www.diodes.com
March 2015
© Diodes Incorporated
DST847BPDP6
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50(-50)
45(-45)
6.0(-5.0)
100 (-100)
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
ESD Ratings
(Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
2 of 9
www.diodes.com
March 2015
© Diodes Incorporated
DST847BPDP6
Thermal Characteristics and Derating Information
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
JA
(t) = r(t) * R
JA
R
JA
= 370°C/W
D = 0.02
0.01
P(pk)
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
10
100
1,000
1,000
0.4
P(pk), PEAK TRANSIENT POWER (W)
R
JA
(t) = r(t) * R
JA
R
JA
= 370°C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
P
D
, POWER DISSIPATION (W)
100
Single Pulse
0.3
Note 3
10
0.2
1
0.1
0.1
0.01
0.00001
0.001
0.1
10
1,000
t
1
, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0
20
40
60
80 100 120 140 160
T
A
, AMBIENT TEMPERATURE (
C)
Fig. 3 Power Dissipation vs. Ambient Temperature
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
3 of 9
www.diodes.com
March 2015
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q1 NPN Transistor
(@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Collector-Base Capacitance
Note:
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
cbo
Min
50
50
45
6
-
-
200
-
-
-
-
580
100
-
Typical
150
150
65
8.35
-
220
300
50
122
760
880
650
725
175
1.5
Max
-
-
-
-
15
-
470
125
300
1,000
1,100
750
800
-
-
Unit
V
V
V
V
nA
Test Condition
I
C
= 10µA, I
B
= 0
I
C
= 10µA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 1µA, I
C
= 0
V
CB
= 30V
I
C
= 10µA, V
CE
= 5V
-
I
C
= 2.0mA, V
CE
= 5V
I
C
= 10mA, I
B
= 0.5mA
mV
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
mV
I
C
= 100mA, I
B
= 5.0mA
I
C
= 2.0mA, V
CE
= 5V
mV
I
C
= 10mA, V
CE
= 5V
V
CE
= 5V, I
C
= 10mA,
MHz
f = 100MHz
pF V
CB
= 10V, f = 1.0MHz
7. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
4 of 9
www.diodes.com
March 2015
© Diodes Incorporated
DST847BPDP6
Typical Characteristics – Q1 NPN Transistor
(@T
A
= +25°C, unless otherwise specified.)
0.16
I
B
= 1.8mA
I
B
= 2mA
450
V
CE
= 5V
0.14
I
B
= 1.6mA
I
B
= 1.4mA
I
B
= 1.2mA
400
350
h
FE
, DC CURRENT GAIN
I
B
= 1mA
I
B
= 0.8mA
I
B
= 0.6mA
I
B
= 0.4mA
T
A
= 150°C
T
A
= 100°C
I
C
, COLLECTOR CURRENT (A)
0.12
0.10
0.08
0.06
0.04
0.02
0
I
B
= 0.2mA
300
250
200
150
100
50
0
T
A
= 25°C
T
A
= -55°C
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
0.20
0.18
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
1
I
C
/I
B
= 20
0.16
0.14
0.12
0.10
0.08
0.06
0.04
T
A
= 25°C
T
A
= 150°C
T
A
= 100°C
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
T
A
= 10°C
0.1
T
A
= 20°C
T
A
= 50°C
T
A
= 100°C
0.02
0
1
T
A
= -55°C
0.01
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5V
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
1.1
1.0
0.9
0.8
0.7
T
A
= 25°C
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
0.5
0.4
0.3
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
March 2015
© Diodes Incorporated
T
A
= 100°C
0.4
T
A
= 150°C
T
A
= 100°C
T
A
= 150°C
0.2
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
5 of 9
www.diodes.com
京公网安备 11010802033920号
EEWORLD
