Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
12A TRIACs
BTA12-600/800/1200
TO-220 (Ins)
BTB12-600/800/1200
TO-220 (Non-Ins)
Leaded Plastic Package
RoHS compliant
FEATURES:
1. High ability to withstand the shock loading of large current
2. Provide high dv/dt rate with strong resistance to electromagnetic interface
3. High commutation performances
APPLICATIONS:
3 quadrants products especially recommended for use on inductive load
ABSOLUTE MAXIMUM RATINGS
@
T
a
= 25
℃
(unless otherwise specified)
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25℃)
Repetitive peak reverse voltage (T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
RMS on-state current (T
C
=75℃)
TO-220 (Ins) (T
C
=90°C)
TO-220 (Non-Ins)(T
C
=105°C)
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
P
GM
Value
-40 to 150
-40 to 125
600 / 800 / 1200
600 / 800 / 1200
V
DRM
+100
V
RRM
+100
12
120
72
50
4
1
5
Unit
℃
℃
V
V
V
V
A
A
A
2
s
A/μs
A
W
W
Non repetitive surge peak on-state current (full cycle, F=50Hz)
I2t value for fusing (t
p
=10ms)
Critical rate of rise of on-state current (I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
BTA12-600/800/1200
Rev1_200220120EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 1 of 6
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
ELECTRICAL CHARACTERISTICS
@
T
a
= 25
℃
(unless otherwise specified)
3 Quadrants
Parameters
Triggering gate current
Triggering gate voltage
Non-triggering gate voltage
Symbol
I
GT
V
GT
V
GD
Test
Condition
V
D
= 12V
R
L
= 33Ω
V
D
=V
DRM ,
T
j
=125
℃
, R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open T
j
=125℃
Quadrant
Min/
Max
MAX
MAX
MIN
70
80
60
1000
12
BW
50
Value
CW SW
35
1.3
0.2
50
60
40
500
6.5
Value
B
50
70
1.3
0.2
50
100
50
400
40
80
25
200
C
25
50
30
40
15
40
5
15
20
10
20
3.5
10
TW
5
Unit
mA
V
V
Ⅰ
-
Ⅱ
-
Ⅲ
Ⅰ
-
Ⅱ
-
Ⅲ
Ⅰ
-
Ⅱ
-
Ⅲ
Ⅰ
-
Ⅲ
Ⅱ
Latching current
Holding current
Critical rate of rise of off-state
voltage
4 Quadrants
Parameters
Triggering gate current
Triggering gate voltage
Off-State gate voltage
I
L
I
H
dV/dt
MAX
MAX
MIN
MIN
Min/
Max
MAX
MAX
MIN
mA
mA
V/μs
V/μs
Unit
(dV/dt)c Without snubber Tj=125°C
Symbol
I
GT
V
GT
V
GD
Test
Condition
V
D
=12V
R
L
=33Ω
V
D
=V
DRM
T
j
=125
℃
R
L
=3.3KΩ
ALL
Quadrant
Ⅰ
-
Ⅱ
-
Ⅲ
Ⅳ
ALL
mA
V
V
Latching current
Holding current
Critical rate of rise of off-state
voltage
Static Characteristics
Parameters
Peak on-state voltage drop
I
L
I
H
dV/dt
I
G
=1.2I
GT
Ⅰ
-
Ⅲ
-
Ⅳ
Ⅱ
I
T
=100mA
T
j
=125℃
MAX
MAX
MIN
Min/
Max
MAX
MAX
MAX
mA
mA
V/μs
V
D
=2/3V
DRM
Gate Open
Symbol
V
TM
Test
Condition
I
TM
=17A
t
p
=380μs
Quadrant
Tj=25℃
T
j
= 25
℃
T
j
= 125
℃
Symbol
R
θ(j-c)
Value
1.55
5
1
Value
2.3
1.4
Unit
V
μA
mA
Unit
Maximum forward leakage
I
DRM
V
D
=V
DRM
current
Maximum reverse leakage
V
R
=V
RRM
I
RRM
current
Thermal Resistance
Parameters
TO-220 (Non-Ins)
Max Thermal Resistance
Junction to case(AC)
TO-221 (Ins)
BTA12-600/800/1200
Rev1_200220120EBJ
Continental Device India Pvt. Limited
℃
/W
Data Sheet
Page 2 of 6
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
Typical Characteristic curves
BTA12-600/800/1200
Rev1_200220120EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 3 of 6
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
Package Details
BTA12-600/800/1200
Rev1_200220120EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 4 of 6
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
Recommended Product Storage Environment for Discrete
Semiconductor Devices
This storage environment assumes that the Diodes and transistors are packed properly inside the original
packing supplied by CDIL.
·
Temperature 5 °C to 30 °C
·
Humidity between 40 to 70 %RH
·
Air should be clean.
·
Avoid harmful gas or dust.
·
Avoid outdoor exposure or storage in areas subject to rain or water spraying .
·
Avoid storage in areas subject to corrosive gas or dust. Product shall not be stored in areas exposed
to direct sunlight.
·
Avoid rapid change of temperature.
·
Avoid condensation.
·
Mechanical stress such as vibration and impact shall be avoided.
·
The product shall not be placed directly on the floor.
·
The product shall be stored on a plane area. They should not be turned upside down.
They should not be placed against the wall.
Shelf Life of CDIL Products
The shelf life of products is the period from product manufacture to shipment to customers. The product can be
unconditionally shipped within this period. The period is defined as 2 years.
If products are stored longer than the shelf life of 2 years the products shall be subjected to quality check as per
CDIL quality procedure.
The products are further warranted for another one year after the date of shipment subject to the above conditions
in CDIL original packing.
Floor Life of CDIL Products and MSL Level
When the products are opened from the original packing, the floor life will start.
For this, the following JEDEC table may be referred:
JEDEC MSL Level
Time
Condition
Unlimited
1 Year
4 Weeks
168 Hours
72 Hours
48 Hours
24 Hours
Time on
Label(TOL)
≤30 °C / 85% RH
≤30 °C / 60% RH
≤30 °C / 60% RH
≤30 °C / 60% RH
≤30 °C / 60% RH
≤30 °C / 60% RH
≤30 °C / 60% RH
≤30 °C / 60% RH
Level
1
2
2a
3
4
5
5a
6
BTA12-600/800/1200
Rev1_200220120EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 5 of 6
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