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VS-2EFH02HM3

Description
Hyperfast Rectifier
File Size113KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

VS-2EFH02HM3 Overview

Hyperfast Rectifier

VS-2EFH02HM3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
Cathode
Anode
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
SMF
(DO-219AB)
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Diode variation
SMF (DO-219AB)
2A
200 V
0.95 V
25 ns
175 °C
Single die
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperature range
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 150 °C
(1)
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
2
50
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
, V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 2 A
I
F
= 2 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.88
0.75
-
1
8
MAX.
-
0.95
0.82
2
8
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 26-Nov-14
Document Number: 95790
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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