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AS098Q300W

Description
High Power Stacked Infrared Laser Diode Array
File Size114KB,2 Pages
ManufacturerRoithner Lasertechnik GmbH
Websitehttp://www.roithner-laser.com/
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AS098Q300W Overview

High Power Stacked Infrared Laser Diode Array

AS098Q300W
TECHNICAL DATA
High Power Stacked Infrared Laser Diode Array
Features
Output Power: 300 W qCW
920-980 nm Emission Wavelength
Spectral Width:
≤4
nm
High Reliability, High Efficiency
QCW stack can be designed according to the
customer of non-standard products heat sink
package
Applications
Laser Pumping
Medical Usage
High power laser diode applications
Specifications (25°C)
Item
Optical Specifications
qCW Output Power
qCW Output Power / Bar
Array Length
Center Wavelength
Wavelength Tolerance
Spectral Width
Package Style
Bar Length
Number of Bars
Wavelength Temperature Coefficient
Beam Divergence
Electrical Specifications
Slope Efficiency
Conversion Efficiency
Threshold Current
Operating Current
Operating Voltage
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
P
O
P
S
L
λ
C
Δλ
Value
300
60
10
920-980
±5
4
Micro Channel
0.4
5
0.3
40x8
0.8
30%
15
75
10
2.5
+10 … +40
-40 ... +85
Unit
W
W
mm
nm
nm
nm
mm
nm/°C
deg
W/A
A
A
V
V
°C
°C
θ
×θ
E
S
N
S
I
TH
I
F
U
F
U
R
T
OP
T
STG
20.09.2010
AS098Q300W
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