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V40100K_15

Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
File Size128KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

V40100K_15 Overview

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40100K
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS
®
TO-220AB
• 150 °C high performance Schottky diode
• Very low forward voltage drop
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• Negligible switching losses
2
1
3
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency converters, high efficiency SMPS,
output rectification, freewheeling, reverse battery
protection, DC/DC system and increased power density
systems.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A at T
J
= 125 °C
T
J
max.
Package
Diode variation
2 x 20 A
100 V
250 A
0.63 V
150 °C
TO-220AB
Dual common cathode
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Marking:
V40100K
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectifeid current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
J
= 25 °C, I
AS
= 1.5 A, L = 60 mH per diode
Voltage rate of change
Operating junction and storage temperature range
total device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
dV/dt
T
J
, T
STG
V40100K
100
40
20
250
67.5
10 000
-40 to +150
UNIT
V
A
A
mJ
V/μs
°C
Revision: 17-Aug-15
Document Number: 89208
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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