DSS4160DS
60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26
Features
BV
CEO
> 60V
I
C
= 1A high Continuous Collector Current
I
CM
= 2A Peak Pulse Current
R
CE(sat)
= 100mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage V
CE(sat)
< 250mV @ 1A
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.015 grams (approximate)
SOT26
C1
C2
E1
B1
C1
B2
E2
Top View
Pin-Out
B1
B2
C2
E1
Top View
Device Symbol
E2
Ordering Information
(Note 4)
Product
DSS4160DS-7
Notes:
Marking
ZN9
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green”
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2013
A
Jan
1
Feb
2
2014
B
Mar
3
2015
C
Apr
4
May
5
2016
D
Jun
6
2017
E
Jul
7
Aug
8
2018
F
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
DSS4160DS
Document number DS36556 Rev. 1 – 2
1 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS4160DS
Absolute Maximum Ratings – Q1 & Q2 Common
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base current
Peak Pulse Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
80
60
5
1
2
300
1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Notes 5 & 9)
(Notes 6 & 9)
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 5 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Note 11)
P
D
Symbol
Value
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
139
113
113
73
96
-55 to +150
Unit
W
mW/C
Thermal Resistance, Junction to Ambient
R
JA
C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
JL
T
J
, T
STG
C
ESD Ratings
(Note 12)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as note (7), except the device is measured at t < 5 seconds.
9. One active die operating with the collector attached to the heatsink.
10. Two active dice running at equal power with heatsink split 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).
12. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS4160DS
Document number DS36556 Rev. 1 – 2
2 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS4160DS
Thermal Characteristics and Derating Information
V
CE(sat)
I
C
Collector Current (A)
1
Limit
DC
1s
100ms
T
amb
=25°C
25mm x 25mm
1oz FR4
10ms
1ms
100µs
100m
10m
100m
V
CE
Collector-Emitter Voltage (V)
1
10
Safe Operating Area
120
140
Thermal Resistance (°C/W)
120
100
Thermal Resistance (°C/W)
T
amb
=25°C
25mm x 25mm
1oz FR4
T
amb
=25°C
100
80
60
40
20
50mm x 50mm
2oz FR4
D=0.5
Single Pulse
D=0.2
D=0.05
D=0.1
80
D=0.5
60
40
D=0.2
20
0
100µ
1m
Single Pulse
D=0.05
D=0.1
10m 100m
1
10
100
1k
0
100µ
1m
10m 100m
1
10
100
1k
Transient Thermal Impedance
Single Pulse
T
amb
=25°C
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
2.0
50mm x 50mm 2oz FR4
One active die t<5secs
25mm x 25mm 1oz FR4
Two active die
50mm x 50mm 2oz FR4
One active die
25mm x 25mm 1oz FR4
one active die
Max Power Dissipation (W)
Max Power Dissipation (W)
100
1.5
10
50mm x 50mm
2oz FR4
1.0
1
25mm x 25mm
1oz FR4
0.5
15mm x 15mm 1oz FR4
one active die
100µ
1m
10m 100m
1
10
100
1k
0.0
0
20
40
60
80
100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
DSS4160DS
Document number DS36556 Rev. 1 – 2
3 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS4160DS
Electrical Characteristics - Q1 & Q2 common
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 13)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
Min
80
60
5
250
200
100
150
Typ
380
420
380
60
70
100
100
940
780
5.5
220
63
33
30
420
380
40
Max
100
50
100
100
110
140
250
250
1100
900
10
Unit
V
V
V
nA
µA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 60V, I
E
= 0A
V
CB
= 60V, I
E
= 0A, T
J
= +150°C
V
CES
= 60V, V
BE
= 0V
V
EB
= 5V, I
C
= 0A
I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 50mA
I
C
= 1A, V
CE
= 5V
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 50mA
f = 100MHz
Collector-Emitter Saturation Voltage (Note 13)
Equivalent On-Resistance
Base-Emitter Saturation Voltage (Note 13)
Base-Emitter Turn-On Voltage (Note 13)
Output Capacitance
Transition Frequency
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
V
CE(sat)
R
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
on
t
d
t
r
t
off
t
s
t
f
mV
mΩ
mV
mV
pF
MHz
ns
ns
ns
ns
ns
ns
V
CC
= 10V, I
C
= 0.5A
I
B1
= -I
B2
= 25mA
13. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle
≤
2%
DSS4160DS
Document number DS36556 Rev. 1 – 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS4160DS
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1,000
T
A
= 150°C
V
CE
= 5V
1
I
C
/I
B
= 10
800
h
FE
, DC CURRENT GAIN
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
600
T
A
= 85°C
400
T
A
= 25°C
0.01
T
A
= -55°C
200
T
A
= -55°C
0
0.001
1,000
10
100
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
0.1
1
10
100
1,000 10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5V
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1.0
1.2
I
C
/I
B
= 10
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
0.4
T
A
= 85°C
0.2
0
0.1
T
A
= 150°C
0.2
0
T
A
= 150°C
1
10
100
1,000 10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.1
1
1,000 10,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
180
150
CAPACITANCE (pF)
f = 1MHz
120
90
C
ibo
60
30
0
0.1
C
obo
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics
DSS4160DS
Document number DS36556 Rev. 1 – 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
