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ES2A_14

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size376KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

ES2A_14 Overview

RECTIFIER DIODE

ES2A_14 Parametric

Parameter NameAttribute value
stateActive
Diode typeRECTIFIER DIODE
ES2A thru ES2J
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Super fast recovery time for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Super Fast Rectifiers
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.09 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@2A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
25
20
75
- 55 to +150
- 55 to +150
0.95
10
350
35
20
O
ES
2A
50
35
50
ES
2B
100
70
100
ES
2C
150
105
150
ES
2D
200
140
200
2
50
ES
2F
300
210
300
ES
2G
400
280
400
ES
2H
500
350
500
ES
2J
600
420
600
Unit
V
V
V
A
A
1.3
1.7
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405037
Version: H14

ES2A_14 Related Products

ES2A_14 ES2JR5 ES2JR5G ES2JHR5
Description RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Is it Rohs certified? - conform to conform to conform to
Maker - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
package instruction - ROHS COMPLIANT, PLASTIC, SMB, 2 PIN GREEN, PLASTIC, SMB, 2 PIN ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Reach Compliance Code - compli compli compli
ECCN code - EAR99 EAR99 EAR99
application - EFFICIENCY EFFICIENCY EFFICIENCY
Configuration - SINGLE SINGLE SINGLE
Diode component materials - SILICON SILICON SILICON
Maximum forward voltage (VF) - 1.7 V 1.7 V 1.7 V
JEDEC-95 code - DO-214AA DO-214AA DO-214AA
JESD-30 code - R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current - 50 A 50 A 50 A
Number of components - 1 1 1
Phase - 1 1 1
Number of terminals - 2 2 2
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C
Maximum output current - 2 A 2 A 2 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage - 600 V 600 V 600 V
Maximum reverse current - 10 µA 10 µA 10 µA
Maximum reverse recovery time - 0.035 µs 0.035 µs 0.035 µs
surface mount - YES YES YES
Terminal form - C BEND C BEND C BEND
Terminal location - DUAL DUAL DUAL

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