FW340 datasheet, PDF - EEWORLD Datasheet

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FW340: DescriptionTRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,5A I(D),SO; CategoryDiscrete semiconductor The transistor; File Size56KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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FW340 Overview

TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,5A I(D),SO

FW340 Parametric

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	,
Reach Compliance Code	compliant
Maximum drain current (Abs) (ID)	5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	2.2 W
surface mount	YES

FW340 Preview

Ordering number : ENA0424

FW340

SANYO Semiconductors

DATA SHEET

N-Channel and P-Channel Silicon MOSFETs

FW340

Features

•

General-Purpose Switching Device

Applications

•

For motor drives, inverters.

Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage

contained in a single package.

High-density mounting.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10s)

Drain Current (PW≤100ms)

Drain Current (PW≤10µs)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

Duty cycle≤1%

Mounted on a ceramic board

(2000mm

!0.8mm)1unit,

PW≤10s

Mounted on a ceramic board

(2000mm

!0.8mm),

PW≤10s

Conditions

N-channel

±20

5.5

1.8

2.2

150

--55 to +150

P-channel

-30

±20

--5

--5.5

--9

-20

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

[N-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

V(BR)DSS

IDSS

IGSS

VGS(off)



yfs



RDS(on)1

RDS(on)2

RDS(on)3

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=5A

ID=5A, VGS=10V

ID=3A, VGS=4.5V

ID=3A, VGS=4V

±10

1.2

3.3

5.5

2.6

µA

mΩ

Symbol

Conditions

Ratings

min

typ

max

Unit

Marking : W340

Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82306 / 62006PA MS IM TB-00002412 No. A0424-1/6

FW340

Continued from preceding page.

Parameter

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

[P-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)



yfs



RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

ID=--1mA, VGS=0V

VDS=--30V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=-

-1mA

VDS=--10V, ID=-

-5A

ID=--5A, VGS=--10V

ID=--3A, VGS=--4.5V

ID=--3A, VGS=--4V

VDS=--10V, f=1MHz

See specified Test Circuit.

VDS=--10V, VGS=-

-10V, ID=--5A

VDS=--10V, VGS=-

-10V, ID=--5A

VDS=--10V, VGS=-

-10V, ID=--5A

IS=--5A, VGS=0V

--1.2

4.5

7.5

1000

195

150

16.5

2.5

--0.85

--1.5

--30

--1

±10

--2.6

µA

mΩ

Symbol

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

Conditions

VDS=10V, f=1MHz

See specified Test Circuit.

VDS=10V, VGS=10V, ID=5A

IS=5A, VGS=0V

Ratings

min

typ

460

8.6

2.0

1.6

0.9

1.2

max

Unit

Package Dimensions

unit : mm

7005-003

Electrical Connection

0.3

0.43

0.2

5.0

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

SANYO : SOP8

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

Top view

4.4

6.0

0.595

1.27

0.1

1.5

1.8 MAX

No. A0424-2/6

FW340

Switching Time Test Circuit

[N-channel]

VIN

10V

VIN

ID=5A

RL=3Ω

VDD=15V

[P-channel]

VIN

--10V

VIN

VOUT

VDD= --15V

ID= --5A

RL=3Ω

PW=10µs

D.C.≤1%

PW=10µs

D.C.≤1%

VOUT

FW340

P.G

50Ω

FW340

P.G

50Ω

ID -- VDS

10.0V

8.0V

6.0V

[Nch]

ID -- VGS

[Nch]

VDS=10V

4.0V

3.5

3.0

Drain Current, ID -- A

2.5V

VGS=2.0V

0.2

0.4

0.6

0.8

1.0

IT04957

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Drain-to-Source Voltage, VDS -- V

140

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

140

Ta=7

--25

IT04958

[Nch]

Ta=25

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

RDS(on) -- Ta

[Nch]

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

120

100

ID=3A

I D=3

=4.0

VGS

=4.5

VGS

I D=3

=10.0V

, V GS

I D=5A

--60

--40

--20

100

120

140

160

Gate-to-Source Voltage, VGS -- V

IT11087

Ambient Temperature, Ta --

°C

IT11088

No. A0424-3/6

FW340



fs -- ID

VDS=10V

[Nch]

1.0

0.1

0.01

0.001

IS -- VSD

Forward Transfer Admittance,



fs -- S

[Nch]

VGS=0V

1.0

0.1

0.01

-25

Source Current, IS -- A

5 7

0.1

5 7

1.0

Drain Current, ID -- A

100

IT11089

5 7

0.2

0.4

Ta=

--25

0.6

0.8

1.0

1.2

1.4

IT04962

SW Time -- ID

[Nch]

Switching Time, SW Time -- ns

VDD=15V

VGS=10V

Ciss, Coss, Crss -- pF

1000

Ciss, Coss, Crss -- VDS

Ciss

Diode Forward Voltage, VSD -- V

[Nch]

f=1MHz

td (off)

100

Coss

Crss

0.1

1.0

td(on)

IT04963

IT11090

Drain Current, ID -- A

VGS -- Qg

Drain-to-Source Voltage, VDS -- V

1.0

0.1

[Nch]

ASO

[Nch]

PW≤10µs

100

Gate-to-Source Voltage, VGS -- V

VDS=10V

ID=5A

Drain Current, ID -- A

IDP=20A

ID=5A

Operation in this area

is limited by RDS(on).

era

ion

0.01

0.1

Ta=25°C

Single pulse

Mounted on a ceramic board (2000mm

!0.8mm)

1unit

7 1.0

7 10

Total Gate Charge, Qg -- nC

--5.0

IT11091

ID -- VDS

Drain-to-Source Voltage, VDS -- V

--10

IT11092

[Pch]

ID -- VGS

[Pch]

VDS= --10V

--9

--8

--10

--4.0

--6.

Drain Current, ID -- A

-4.

--3

Drain Current, ID -- A

--7

--6

--5

--3.0

--3.0V

--4

--3

--1

--0.1

--0.2

--0.3

--0.4

--0.5

--0.6

--0.7

--0.8

--0.9

--1.0

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

--3.5

--4.0

Drain-to-Source Voltage, VDS -- V

IT07390

Gate-to-Source Voltage, VGS -- V

--1.0

VGS= --2.5V

--2

Ta=7

--25

--2.0

--4

IT11093

No. A0424-4/6

FW340

140

RDS(on) -- VGS

ID=

--5A

[Pch]

Ta=25°C

140

RDS(on) -- Ta

[Pch]

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

120

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

120

ID=

--3A

100

--4

, VGS

--3A

I D=

--4.5

, VG

--3A

I D=

--10

, V GS

I D=

--2

--4

--6

--8

--10

--12

--14

--16

--60

--40

--20

100

120

140

160

Gate-to-Source Voltage, VGS -- V



fs -- ID

IT07392

Ambient Temperature, Ta --

°C

--10

--1.0

--0.1

IT07393

[Pch]

IS -- VSD

[Pch]

VGS=0V

Forward Transfer Admittance,



fs -- S

VDS= --10V

--0.4

1.0

0.1

--0.01

5 7 --0.1

5 7 --1.0

Drain Current, ID -- A

5 7 --10

IT11094

--0.01

--0.2

Ta=

--0.6

--25

--0.8

--2

Source Current, IS -- A

--1.0

--1.2

IT07395

SW Time -- ID

VDD= --15V

VGS= --10V

td(off)

[Pch]

Ciss, Coss, Crss -- VDS

Diode Forward Voltage, VSD -- V

[Pch]

f=1MHz

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

100

1000

Ciss

Coss

Crss

--0.1

td(on)

100

--1.0

Drain Current, ID -- A

--10

--9

--10

IT07396

--5

--10

--15

--20

--25

--30

IT07397

Drain-to-Source Voltage, VDS -- V

--10

--1.0

--0.1

VGS -- Qg

VDS= --10V

ID= --5A

[Pch]

ASO

IDP= --20A

ID= --5A

[Pch]

PW≤10µs

Gate-to-Source Voltage, VGS -- V

--8

--7

--6

--5

--4

--3

--2

--1

Drain Current, ID -- A

Operation in this area

is limited by RDS(on).

era

tio

--0.01

--0.1

Ta=25°C

Single pulse

Mounted on a ceramic board (2000mm

!0.8mm)

1unit

7 --1.0

7 --10

Total Gate Charge, Qg -- nC

IT07398

Drain-to-Source Voltage, VDS -- V

IT11095

No. A0424-5/6

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