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BAS40RF

Description
Low VF SMD Schottky Barrier Diode
File Size236KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAS40RF Overview

Low VF SMD Schottky Barrier Diode

BAS40 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
Low VF SMD Schottky Barrier Diode
FEATURES
- Metal-on-silicon schottky barrier
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260
o
C/10s
- Weight: 0.008g (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
=10μA
I
F
=1mA
I
F
=10mA
I
F
=40mA
V
R
=30V
V
R
=1V, f=1.0MHz
I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
I
R
C
J
t
rr
V
F
(Note 1)
(Note 2)
SYMBOL
P
D
V
RRM
V
R
I
FRM
I
O
I
FSM
R
θJA
T
J
, T
STG
SYMBOL
V
(BR)
MIN
40
-
-
-
-
-
-
VALUE
200
40
40
200
200
0.6
357
-65 to +125
MAX
-
0.38
0.50
1.00
0.2
5.0
5.0
μA
pF
ns
V
o
UNIT
mW
V
V
mA
mA
A
C/W
o
C
UNIT
V
Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load
Notes : 2. Valid provided that electrodes are kept at ambient temperature
Document Number: DS_S1412006
Version: F14

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