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BAS70RFG

Description
225mW SMD Switching Diode
File Size179KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAS70RFG Overview

225mW SMD Switching Diode

BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
225mW SMD Switching Diode
FEATURES
- Low turn-on voltage
- Fast switching
- PN junction guard ring for transient and ESD protection
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260
o
C/10s
- Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating Junction Temperature
Storage Temperature Range
PARAMETER
Reverse breakdown voltage
Forward voltage
Reverse leakage current
Junction capacitance
Reverse revovery time
I
R
= 10
µA
tp=300µs , I
F
=1.0mA
tp<300µs , I
F
=15mA
tp<300µs , V
R
=50V
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 10 mA, I
RR
= 100
Ω,
I
RR
= 1 mA
(Note 1)
@ t
1.0 s
(Note 1)
(Note 1)
SYMBOL
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
D
R
θJA
T
J
T
STG
SYMBOL
V
(BR)
V
F
I
R
C
J
t
rr
MIN
70
-
-
-
-
-
49
70
100
200
625
-55 to + 125
-55 to + 150
MAX
-
410
1000
100.00
2
5
V
mA
mA
mW
K/W
°C
°C
UNIT
V
mV
nA
pF
ns
70
V
VALUE
UNIT
Notes: 1. Valid provided that terminals are kept at ambient temperature
2. Test period
3000
µs
Document Number: DS_S1404012
Version: E14

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