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BAS81-GS18_15

Description
0.03 A, 40 V, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size86KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BAS81-GS18_15 Overview

0.03 A, 40 V, SILICON, SIGNAL DIODE, DO-213AA

BAS81-GS18_15 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, glass, MINIMELF-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingtin silver
Terminal locationEND
Packaging MaterialsGlass
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage40 V
Maximum average forward current0.0300 A
BAS81, BAS82, BAS83
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• Integrated
discharge
protection
ring
against
static
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
MiniMELF (SOD-80)
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
APPLICATIONS
• HF-detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC/DC converter for notebooks
PARTS TABLE
PART
BAS81
BAS82
BAS83
TYPE DIFFERENTIATION
V
R
= 40 V
V
R
= 50 V
V
R
= 60 V
ORDERING CODE
BAS81-GS18 or BAS81-GS08
BAS82-GS18 or BAS82-GS08
BAS83-GS18 or BAS83-GS08
CIRCUIT CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
t
p
= 1 s
TEST CONDITION
PART
BAS81
BAS82
BAS83
SYMBOL
V
R
V
R
V
R
I
FSM
I
FRM
I
F
VALUE
40
50
60
500
150
30
UNIT
V
V
V
mA
mA
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
-65 to +150
UNIT
K/W
°C
°C
Rev. 2.0, 02-Jun-17
Document Number: 85509
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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