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BAT54-G

Description
0.3 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size101KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BAT54-G Overview

0.3 A, SILICON, SIGNAL DIODE

BAT54-G, BAT54A-G, BAT54C-G, BAT54S-G
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guardring against excessive voltage, such as
electrostatic discharges
BAT54-G
3
BAT54A-G
3
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
1
2
1
2
BAT54C-G
3
BAT54S-G
3
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
Top View
1
2
1
2
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
PARTS TABLE
PART
BAT54-G
BAT54A-G
BAT54C-G
BAT54S-G
ORDERING CODE
BAT54-G3-08 or BAT54-G3-18
BAT54A-G3-08 or BAT54A-G3-18
BAT54C-G3-08 or BAT54C-G3-18
BAT54S-G3-08 or BAT54S-G3-18
CIRCUIT CONFIGURATION
Single
Common anode
Common cathode
Dual serial
TYPE MARKING
L8
L46
L47
L48
Tape and reel
REMARKS
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
(1)
Repetitive peak forward current
Surge forward current
Power dissipation
Note
(1)
Device on fiberglass substrate, see layout on next page.
(1)
(1)
TEST CONDITION
SYMBOL
V
RRM
I
F
I
FRM
VALUE
30
200
300
600
230
UNIT
V
mA
mA
mA
mW
t
p
< 1 s
I
FSM
P
tot
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Storage temperature range
Operating temperature range
Note
(1)
Device on fiberglass substrate, see layout on next page.
Rev. 1.4, 13-Feb-18
Document Number: 83344
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
430
125
-65 to +150
-55 to +125
UNIT
K/W
°C
°C
°C

BAT54-G Related Products

BAT54-G BAT54A-G3-0
Description 0.3 A, SILICON, SIGNAL DIODE 0.3 A, SILICON, SIGNAL DIODE

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