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MG300Q1US2

Description
TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
CategoryDiscrete semiconductor    The transistor   
File Size48KB,1 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

MG300Q1US2 Overview

TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MG300Q1US2 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)300 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Number of components1
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
Transistor component materialsSILICON

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