High Power LED
BL-LS5630A1S1
Features:
1W LEDs , 5.6mmx3.0mm SMD, 0.9mm THICKNESS
Longer service and less luminosity loss, 50,000hours
Different emitting colors are available Working current: 200-350mA
With or without heat sink are both available
PACKAGE: 2000PCS/REEL
Applications:
Commercial lighting
Residential lighting
Decorative lighting
Electrical-optical characteristics: (Ta=25°C)
Chip
Part Number
Emitted Color
(Test Condition: IF=120mA)
View
ing
Angl
e
2θ1/2
(deg)
P
(nm) or
CTT
Lens
Type
Forward
Voltage(VF)
Unit:V
Flux
Unit:lm
Typ
BL-LS5630A1S1UEC-1W
BL-LS5630A1S1UYC-1W
BL-LS5630A1S1PGC-1W
BL-LS5630A1S1UBC-1W
BL-LS5630A1S1UWC-1W
Ultra Red
Ultra Yellow
Ultra Pure Green
Ultra Blue
Ultra White
630
590
525
470
-
Water
Clear
2.2
2.2
3.2
3.2
3.2
Max
2.75
2.75
3.8
3.8
3.8
Min.
4000
4000
7000
7000
10000
Typ.
6000
6000
10000
10000
15000
120
Absolute maximum ratings (Ta=25°C)
UE
180
120
Parameter
Forward Current I
F
LED Junction Temperature
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Aluminum-Core Pcb
Temperature
UY
180
120
PG
180
120
UB
180
120
UW
180
120
Unit
mA
°C
mA
°C
°C
300
300
300
-40 to +80
-40 to +100
105
300
300
°C
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.1
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High Power LED
BL-LS5630A1S1
Package configuration & Internal circuit diagram
BL-LS5630A1S1 Series
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is
±0.25(0.01")unless
otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.1
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High Power LED
BL-LS5630A1S1
1.0
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(
λ
p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
1
3.0
FORWARD CURRENT(mA)
50
40
30
20
10
0
RELATIVE LUMINOUS INTENSITY
40
30
20
10
0
1.2
1
6
2,4,8,A
3
5
2.0
5
B
1.0
0
20
40
60
80
100
1.6
2.0
2.4
2.6
3.0
20
40
60
80
100
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta(
℃
)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
0
10
20
30
40
50
60
70
1
AMBIENT TEMPERATURE Ta(
℃
)
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
10
100
1000
10,000
1
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10
100
1000
tp-PULSE DURATION uS
(5)
10,000
NOTE:25
℃
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.1
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Embedded System
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