HY62QF16403ASLM-I-85 datasheet, PDF

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HY62QF16403ASLM-I-85: DescriptionStandard SRAM, 256KX16, 85ns, CMOS, PBGA48, MICRO, BGA-48; Categorystorage storage; File Size143KB，8 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY62QF16403ASLM-I-85 Overview

Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, MICRO, BGA-48

HY62QF16403ASLM-I-85 Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	BGA
package instruction	VFBGA,
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	85 ns
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	8.4 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	0.95 mm
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	7.2 mm

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HY62QF16403A Series

256Kx16bit full CMOS SRAM

DESCRIPTION

The HY62QF16403A is a high speed, super low

power and 4Mbit full CMOS SRAM organized as

256K words by 16bits. The HY62QF16403A uses

high performance full CMOS process technology

and is designed for high speed and low power

circuit technology. It is particularly well-suited for

the high density low power system application.

This device has a data retention mode that

guarantees data to remain valid at a minimum

power supply voltage of 1.2V.

FEATURES

•

Fully static operation and Tri-state output

•

TTL compatible inputs and outputs

•

Battery backup

-. 1.2V(min) data retention

•

Standard pin configuration

-. 48-ball uBGA

Product No.

Voltage

(V)

Speed (ns)

Operation

Current/Icc(mA)

HY62QF16403A

2.3~2.7

70/85/100

HY62QF16403A-I 2.3~2.7

70/85/100

Note 1. Blank : Commercial, I : Industrial

2. Current value is max.

Standby

Current(uA)

Temperature

(°C)

0~70

-40~85(I)

PIN CONNECTION

/LB

IO9

BLOCK DIAGRAM

ROW

DECODER

/OE

A16

A15

A13

A10

/CS

IO2

IO4

IO5

IO6

I/O1

SENSE AMP

/UB

IO1

COLUMN

DECODER

IO10 IO11 A5

Vss

Vcc

IO12 A17

IO13 NC

IO3

ADD INPUT

BUFFER

PRE DECODER

I/O8

DATA I/O

BUFFER

Vcc

Vss

IO7

A17

MEMORY ARRAY

256K x 16

WRITE DRIVER

I/O9

BLOCK

DECODER

IO15 IO14 A14

IO16 NC

A12

/WE IO8

A11

I/O16

/CS

uBGA

/OE

/LB

/UB

/WE

PIN DESCRIPTION

Pin Name

/CS

/WE

/OE

/LB

/UB

Pin Function

Chip Select

Write Enable

Output Enable

Lower Byte Control(I/O1~I/O8)

Upper Byte Control(I/O9~I/O16)

Pin Name

I/O1~I/O16

A0~A17

Vcc

Vss

Pin Function

Data Inputs/Outputs

Address Inputs

Power(2.3~2.7)

Ground

No Connection

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.07 / Jun.00

Hyundai Semiconductor

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