Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
16A TRIACS
BTA16-600/800/1200 (Ins)
BTB16-600/800/1200 (Non-Ins)
TO-220
Leaded Plastic Package
RoHS compliant
GENERAL DISCRIPTION :
BTA16 series triacs, with high ability to withstand the shock loading of large current, provide high dv/dt rate
with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrant products
specially recommended for use on inductive load.
APPLICATIONS:
High performance full-wave ac control applications
ABSOLUTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise specified)
PARAMETER
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25°C)
Repetitive peak reverse voltage (T
j
=25°C)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
RMS on-state
current
TO-220 (Ins) (T
C
=86°C)
TO-220 (Non-Ins) (T
C
=107°C)
SYMBOL
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
It
dI/dt
I
GM
P
G(AV)
P
GM
2
VALUE
-40 to +150
-40 to +125
600/800/1200
600/800/1200
V
DRM
+100
V
RRM
+100
16
160
128
50
4
1
5
UNIT
°C
°C
V
V
V
V
A
A
As
A/µs
A
W
W
2
Non repetitive surge peak on-state current (full cycle,
F=50Hz)
I
2
t value for fusing (t
p
=10ms)
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
THERMAL RESISTANCES
PARAMETER
Maximum Thermal
TO-220 (Ins)
Resistance
TO-220 (Non-Ins)
SYMBOL
R
th(j-c)
VALUE (MAX)
2.1
1.2
UNIT
°C/W
BTA16/BTB16_
Rev01 22092020EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 1 of 10
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
ELECTRICAL CHARACTERISTICS at
(Ta = 25
℃
Unless otherwise specified)
3 Quadrants (V
DRM
/V
RRM
: 600/800V)
PARAMETER
Gate Trigger Current
Gate Trigger Voltage
Off-State Gate Voltage
Latching Current
Holding Current
Critical Rate of Rise of
Off-State Voltage
SYMBOL QUADRANT
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
I - II - III
I - II - III
I - II - III
I - III
II
TEST CONDITION
VD =12V RL =33Ω
V
D
=V
DRM
T
j
=125°C
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open
T
j
=125°C
<70
<80
<60
BW
<50
VALUE
CW SW
<35 <10
<1.3
>0.2
<50
<60
<40
<30
<40
<25
<15
<20
<15
TW
<5
UNIT
mA
V
V
mA
mA
>1000 >500 >200 >100 V/μs
4 Quadrant (V
DRM
/V
RRM
: 600/800V)
PARAMETER
Gate Trigger Current
Gate Trigger Voltage
Off-State Gate Voltage
Latching Current
Holding Current
Critical Rate of Rise of
Off-State Voltage
SYMBOL QUADRANT
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
I - II - III
IV
ALL
ALL
I - III - IV
II
TEST CONDITION
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125°C
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open
T
j
=125°C
TEST CONDITION
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125°C
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open
T
j
=125°C
<70
<100
<60
>500
VALUE
B
<50
<70
<1.5
>0.2
<50
<80
<40
>200
C
<25
<50
UNIT
mA
V
V
mA
mA
V/μs
3 Quadrants (V
DRM
/V
RRM
: 1200V)
PARAMETER
SYMBOL QUADRANT
Gate Trigger Current
I
GT
I - II - III
Gate Trigger Voltage
Off-State Gate Voltage
Latching Current
Holding Current
Critical Rate of Rise of
Off-State Voltage
V
GT
V
GD
I
L
I
H
dV/dt
I - II - III
I - II - III
I - III
II
VALUE
<50
<1.5
>0.2
<70
<90
<60
>1500
UNIT
mA
V
V
mA
mA
V/μs
BTA16/BTB16_
Rev01 22092020EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 2 of 10
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
ELECTRICAL CHARACTERISTICS at
(Ta = 25
℃
Unless otherwise specified)
STATIC CHARACTERISTICS
PARAMETER
On-State Voltage T
j
=25°C
T
j
=25°C
Off-State
Leakage Current T
j
=125°C
ORDERING INFORMATION
SYMBOL
V
TM
I
DRM
I
RRM
TEST CONDITION
I
TM
=22.5A t
p
=380μs
V
D
=V
DRM
, V
R
=V
RRM
5
2
600V
VALUE
800V
1.5
5
2
1200V
10
1
UNIT
V
μA
mA
BTA12-XY
BTB12-XY
Where
X
= 600: VDRM/VRRM ≥ 600
= 800: VDRM/VRRM ≥ 800
= 1200: VDRM/VRRM ≥ 1200
Y
= BW: IGT1-3 ≤ 50mA
= CW: IGT1-3 ≤ 35mA
= SW: IGT1-3 ≤ 10mA
= TW: IGT1-3 ≤ 5mA
= B: IGT1-3≤50mA IGT4≤70mA
= C: IGT1-3≤25mA IGT4≤50mA
BTA16/BTB16_
Rev01 22092020EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 3 of 10
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
Voltage Current Characteristic of Triacs
(Bidirectional Device)
SYMBOL
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
PARAMETER
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant Definitions for a Triac
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
BTA16/BTB16_
Rev01 22092020EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 4 of 10
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
TEST CIRCUIT AND DIAGRAMS
Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
BTA16/BTB16_
Rev01 22092020EBJ
Continental Device India Pvt. Limited
Data Sheet
Page 5 of 10
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