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EMM5836V1B/001

Description
Wide Band Medium Power Amplifier,
CategoryWireless rf/communication    Radio frequency and microwave   
File Size402KB,18 Pages
ManufacturerSUMITOMO
Websitehttps://global-sei.com/
Download Datasheet Parametric Compare View All

EMM5836V1B/001 Overview

Wide Band Medium Power Amplifier,

EMM5836V1B/001 Parametric

Parameter NameAttribute value
MakerSUMITOMO
Reach Compliance Codeunknown
RF/Microwave Device TypesWIDE BAND MEDIUM POWER

EMM5836V1B/001 Preview

EMM5836V1B/001
K-Band Power Amplifier MMIC
FEATURES
・High
Output Power: Pout=33.5dBm (typ.)
・High
Linear Gain: G
L
=22.0dB (typ.)
・Broad
Band: 17.7 to 19.7GHz
・Impedance
Matched Zin/Zout=50ohm
・Small
Hermetic Metal-Ceramic SMT Package(V1B)
DESCRIPTION
The EMM5836V1B is a MMIC amplifier that contains a four-stage
amplifier, internally matched, for standard communications band in
the 17.7 to 19.7GHz frequency range.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Symbol
V
DD
V
GG
P
in
T
stg
Rating
10
-3
23
-55 to +125
Unit
V
V
dBm
deg.C
RECOMMENDED OPERATING CONDITIONS
Item
Drain-Source Voltage
Input Power
Operating Case Temperature
Symbol
V
DD
P
in
T
C
Condition
=< 6
=<14
-40 to +85
Unit
V
dBm
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Frequency Range
Gate Bias Voltage
Output Power at Pin=13dBm
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency at 1dB G.C.P.
Third Order Intermodulation Distortion
Drain Current at 1dB G.C.P.
Input Return Loss at Pin=-20dBm
Output Return Loss at Pin=-20dBm
*
Symbol
f
Vgg(DC)
Pout
P1dB
G1dB
Nadd
IM3
Iddrf
RLin
RLout
Test Conditions
VDD=6.0V
IDD(DC)=1400mA typ.
Vgg-Const.
Zs=Zl=50ohm
* : df=+10MHz
Pout=20.0dBm
(S.C.L)
Min.
17.7
Limits
Typ.
-
Max.
19.7
Unit
GHz
-0.50 -0.15 -0.01
V
31.5
33.5
-
dBm
-
32.5
-
dBm
20.5
22
-
dB
-
20
-
%
-37
-40
-
dBc
-
1800 2200
mA
-
12
-
dB
-
8
-
dB
G.C.P. : Gain Compression Point
S.C.L. : Single Carrier Level
=< 250V
ESD
Class 0
Note : Based on JEDEC JESD22-A114C (C=100pF, R=1.5kohm)
CASE STYLE
RoHS COMPLIANCE
V1B
YES
ORDERING INFORMATION
Part Number
EMM5836V1B/001
EMM5836V1BT/001
Order Unit
No Limitation
500pcs.
Packing
48 pcs./Tray × 4 Tray = 192 pcs./Packing
500 pcs./Reel × 1 Reel = 500 pcs./Packing
Edition 2.0
June 2011
1
EMM5836V1B/001
K-Band Power Amplifier MMIC
Output Power vs. Frequency
@VDD=6V, IDD(DC)=1400m A
36
34
Output Power (dBm)
Output Power (dBm)
36
34
32
30
28
26
24
22
20
18
16
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Input Pow er (dBm )
Output Power, Drain Current vs. Input Power
@VDD=6V, IDD(DC)=1400m A
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
Drain Current (mA)
32
30
28
26
24
22
20
18
16
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
Frequency (GHz)
Pin=-4dBm
+8dBm
0dBm
+12dBm
+4dBm
P1dB
17.7GHz
18.7GHz
19.7GHz
Power Added Efficiency vs. Frequency
@VDD=6V, IDD(DC)=1400m A
30
Power Added Efficiency (%)
25
20
15
10
5
0
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
Frequency (GHz)
Pin=-4dBm
+8dBm
0dBm
+12dBm
+4dBm
P1dB
Edition 2.0
June 2011
2
EMM5836V1B/001
K-Band Power Amplifier MMIC
IM3 vs. Frequency
@VDD=6V, IDD(DC)=1400m A
-15
IMD vs Output Power
@VDD=6V, IDD(DC)=1400m A
-15
Intermodulation Distortion (dBc)
-20
-25
-30
-35
-40
-45
-50
-55
-60
-20
-25
-30
IM3 (dBc)
-35
-40
-45
-50
-55
-60
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
IM3
IM5
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
2-tone Total Output Pow er (dBm )
Frequency (GHz)
Pout(S.C.L.)=17dBm
20dBm
23dBm
26dBm
17.7GHz
18.7GHz
19.7GHz
P1dB, G1dB vs. Frequency by Drain Voltage
@IDD(DC)=1400m A
36
34
P1dB (dBm), GidB(dB)
P1dB (dBm), GidB(dB)
P1dB, G1dB vs. Frequency by Drain Current
@VDD=6V
36
34
32
30
28
26
24
22
20
32
30
28
26
24
22
20
18
16.5
17
17.5
P1dB
P1dB
G1dB
G1dB
18
18.5
19
19.5
20
20.5
21
18
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
Frequency (GHz)
VDD=5V
6V
1000m A
Frequency (GHz)
1200m A
1400m A
1600m A
Edition 2.0
June 2011
3
EMM5836V1B/001
K-Band Power Amplifier MMIC
Output Power, Drain Current vs. Input Power
by Drain Voltage
@IDD(DC)=1400m A, Freq.=17.7GHz
36
34
32
Output Power (dBm)
30
28
26
24
22
20
18
16
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Input Pow er (dBm )
5V
6V
3200
3000
Output Power (dBm)
2800
2600
2400
2200
2000
1800
1600
1400
1200
Drain Current (mA)
36
34
32
30
28
26
24
22
20
18
16
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Input Pow er (dBm )
5V
6V
Output Power, Drain Current vs. Input Power
by Drain Voltage
@IDD(DC)=1400m A, Freq.=18.7GHz
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
Drain Current (mA)
Output Power, Drain Current vs. Input Power
by Drain Voltage
@IDD(DC)=1400m A, Freq.=19.7GHz
36
34
32
Output Power (dBm)
30
28
26
24
22
20
18
16
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Input Pow er (dBm )
5V
6V
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
Drain Current (mA)
Edition 2.0
June 2011
4
EMM5836V1B/001
K-Band Power Amplifier MMIC
Output Power, Drain Current vs. Input Power
by Drain Current
@VDD=6V, Freq.=17.7GHz
36
34
32
Output Power (dBm)
30
28
26
24
22
20
18
16
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Input Pow er (dBm )
1000m A
1200m A
1400m A
1600m A
1000m A
2800
2600
2400
Output Power (dBm)
Drain Current (mA)
2200
2000
1800
1600
1400
1200
1000
800
36
34
32
30
28
26
24
22
20
18
16
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Input Pow er (dBm )
1200m A
1400m A
1600m A
Output Power, Drain Current vs. Input Power
by Drain Current
@VDD=6V, Freq.=18.7GHz
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
Drain Current (mA)
Output Power, Drain Current vs. Input Power
by Drain Current
@VDD=6V, Freq.=19.7GHz
36
34
32
Output Power (dBm)
30
28
26
24
22
20
18
16
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Input Pow er (dBm )
1000m A
1200m A
1400m A
1600m A
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
Drain Current (mA)
Edition 2.0
June 2011
5

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