DIM1000XSM33-TL001
Single Switch IGBT Module
DS6104-1 June 2013 (LN30632)
FEATURES
10.2kV Isolation
Low V
CE(sat)
Device
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
3300V
2.0V
1000A
2000A
* Measured at the auxiliary terminals
7(C)
5(C)
APPLICATIONS
3(C)
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
1(E)
6(E)
4(E)
2(G)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1000XSM33-TL000 is a Low V
CE(sat)
single
switch 3300V, soft punch through n-channel
enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias
safe operating area (RBSOA) plus 10μs short circuit
withstand. This device is optimised for traction drives
and other applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1000XSM33-TL000
Note: When ordering, please use the complete part
number
Outline type code: X
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM1000XSM33-TL001
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
Partial discharge – per module
2
Test Conditions
V
GE
= 0V
Max.
3300
±20
Units
V
V
A
A
kW
kA s
kV
pC
2
T
case
= 115°C
1ms, T
case
= 140°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 6900V, V
2
= 5100V, 50Hz RMS
1000
2000
10.4
320
10.2
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor
Thermal resistance – diode
Thermal resistance – case to heatsink
Junction temperature
Storage temperature range
AlN
AlSiC
56mm
26mm
>600
Test Conditions
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
Min
-
-
-
-
-
-40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max
12
24
8
150
150
125
5
2
10
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Nm
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000XSM33-TL001
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
V
GE
= 0V, V
CE
= V
CES
I
CES
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
V
GE
= 0V, V
CE
= V
CES
, T
case
= 150°C
I
GES
V
GE(TH)
Gate leakage current
Gate threshold voltage
V
GE
= ± 20V, V
CE
= 0V
I
C
= 80mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 1000A
V
CE(sat)
†
Min
Typ
Max
4
60
100
1
Units
mA
mA
mA
μA
V
V
V
V
A
A
V
V
V
nF
μC
nF
nH
μ
5.7
2.0
2.6
2.8
1000
2000
2.4
2.5
2.4
170
17
4
15
135
Collector-emitter saturation
voltage
V
GE
= 15V, I
C
= 1000A, T
j
= 125°C
V
GE
= 15V, I
C
= 1000A, T
j
= 150°C
I
F
I
FM
Diode forward current
Diode maximum forward current
DC
t
p
= 1ms
I
F
= 1000A
V
F
†
Diode forward voltage
I
F
= 1000A, T
j
= 125°C
I
F
= 1000A, T
j
= 150°C
C
ies
Q
g
C
res
L
M
R
INT
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance
Internal resistance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V Including external C
ge
V
CE
= 25V, V
GE
= 0V, f = 1MHz
T
j
= 125°C, V
CC
= 2500V
SC
Data
Short circuit current, I
SC
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
Note:
†
Measured at the auxiliary terminals
*
L is the circuit inductance + L
M
*
3700
A
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM1000XSM33-TL001
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 1000A
V
GE
= ±15V
V
CE
= 1800V
R
G(ON)
= 2.7
R
G(OFF)
= 2.2
C
ge
= 220nF
L
S
~ 100nH
I
F
= 1000A
V
CE
= 1800V
dI
F
/dt = 2700A/μs
Min
Typ.
2700
610
2500
960
430
1600
570
620
670
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 1000A
V
GE
= ±15V
V
CE
= 1800V
R
G(ON)
= 2.7
R
G(OFF)
= 2.2
C
ge
= 220nF
L
S
~ 100nH
I
F
= 1000A
V
CE
= 1800V
dI
F
/dt = 2700A/μs
Min
Typ.
2750
590
2700
1000
460
2050
930
775
1150
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
T
case
= 150°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 1000A
V
GE
= ±15V
V
CE
= 1800V
R
G(ON)
= 2.7
R
G(OFF)
= 2.2
C
ge
= 220nF
L
S
~ 100nH
I
F
= 1000A
V
CE
= 1800V
dI
F
/dt = 2700A/μs
Min
Typ.
2760
590
2950
940
460
2250
1070
800
1300
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM1000XSM33-TL001
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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