Data
DIM1200ASM45-TS000
Single Switch IGBT Module
DS6102-4 December 2014 (LN32160)
Replaces DS6102-3
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
4500V
2.7V
1200A
2400A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
3(C)
9(C)
7(C)
5(C)
2(G)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1200ASM45-TS000 is a single switch 4500V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
1(E)
8(E)
6(E)
4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1200ASM45-TS000
Note: When ordering, please use the complete part
number
Outline type code: A
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM1200ASM45-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
Partial discharge – per module
2
Test Conditions
V
GE
= 0V
Max.
4500
±20
Units
V
V
A
A
kW
kA s
KV
pC
2
T
case
= 90°C
1ms, T
case
= 120°C
T
case
= 25°C, T
j
= 125°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 4800V, V
2
= 3500V, 50Hz RMS
1200
2400
12.5
460
7.4
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
AlN
AlSiC
56mm
26mm
>600
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor
Thermal resistance – diode
Thermal resistance –
case to heatsink (per module)
Junction temperature
Diode
Storage temperature range
-
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Min
-
-
-
-
-
-40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max
8
16
6
125
125
125
5
2
10
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Nm
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200ASM45-TS000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
Q
g
C
res
L
M
R
INT
Parameter
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Gate leakage current
Gate threshold voltage
Collector-emitter
saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
I
F
= 1200A, T
j
= 125°C
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance
Internal transistor resistance
T
j
= 125°C, V
CC
= 3400V
SC
Data
Short circuit current, I
SC
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
Test Conditions
V
GE
= 0V, V
CE
= V
CES
Min
Typ
Max
4
90
1
Units
mA
mA
μA
V
V
V
A
A
V
V
nF
μC
nF
nH
μ
V
GE
= ± 20V, V
CE
= 0V
I
C
= 120mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 1200A
V
GE
= 15V, I
C
= 1200A, T
j
= 125°C
DC
t
p
= 1ms
I
F
= 1200A
5.8
2.7
3.5
1200
2400
2.8
3.2
150
17
12
10
90
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V Including external C
ge
V
CE
= 25V, V
GE
= 0V, f = 1MHz
4800
A
Note:
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM1200ASM45-TS000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
I
C
= 1200A
V
GE
= ±15V
V
CE
= 2800V
R
G(ON)
= 2.4
R
G(OFF)
= 2.7
C
ge
= 220nF
L
S
~ 165nH
Test Conditions
Min
Typ.
3000
600
4500
900
350
4800
1340
1030
2220
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
I
F
= 1200A
V
CE
= 2800V
dI
F
/dt = 3000A/μs
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 1200A
V
GE
= ±15V
V
CE
= 2800V
R
G(ON)
= 2.4
R
G(OFF)
= 2.7
C
ge
= 220nF
L
S
~ 165nH
Min
Typ.
3100
560
4650
900
360
6450
2200
1100
3750
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
I
F
= 1200A
V
CE
= 2800V
dI
F
/dt = 3000A/μs
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM1200ASM45-TS000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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