DIM1800ESS12-A000_15 datasheet, PDF

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DIM1800ESS12-A000_15: DescriptionSingle Switch IGBT Module; File Size359KB，8 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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DIM1800ESS12-A000_15 Overview

Single Switch IGBT Module

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DIM1800ESS12-A000

Single Switch IGBT Module

Replaces DS5857-2

DS5857-3 August 2014 (LN31868)

FEATURES



10µs Short Circuit Withstand

Non Punch Through Silicon

Isolated Cu Base with Al

Substrates

Lead Free construction

KEY PARAMETERS

CES

CE(sat)

* (typ)

(max)

C(PK)

(max)

1200V

2.2V

1800A

3600A

* Measured at the power busbars, not the auxiliary terminals

APPLICATIONS



Motor Controllers

Traction Drives

3(C)

2(G)

9(C)

7(C)

5(C)

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

The DIM1800ESS12-A000 is a single switch 1200V,

n-channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus 10μs

short circuit withstand. This device is optimised for

traction drives and other applications requiring high

thermal cycling capability.

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety

1(E)

8(E)

6(E)

4(E)

Fig. 1 Circuit configuration

ORDERING INFORMATION

Order As:

DIM1800ESS12-A000

Note: When ordering, please use the complete part

number

Outline type code: E

(See Fig. 11 for further information)

Fig. 2 Package

Caution:

This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

www.dynexsemi.com

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