DIM500GDM33-TL000_15 datasheet, PDF

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DIM500GDM33-TL000_15: DescriptionDual Switch IGBT Module; File Size358KB，8 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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DIM500GDM33-TL000_15 Overview

Dual Switch IGBT Module

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DIM500GDM33-TL000

Dual Switch IGBT Module

Replaces DS6113-1

DS6113-2 January 2014 (LN31251)

FEATURES



Low V

CE(sat)

Device

10µs Short Circuit Withstand

High Thermal Cycling Capability

High Current Density Enhanced DMOS SPT

Isolated AlSiC Base with AlN Substrates

KEY PARAMETERS

CES

CE(sat)

* (typ)

(max)

C(PK)

(max)

3300V

2.0V

500A

1000A

* Measured at the auxiliary terminals

1(E1)

2(C)

10(C )

APPLICATIONS



High Reliability Inverters

Motor Controllers

Traction Drives

Choppers

7(E )

6(G )

9(G )

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

The DIM500GDM33-TL000 is a Low V

CE(sat)

single

switch 3300V, n-channel enhancement mode,

insulated gate bipolar transistor (IGBT) module. The

IGBT has a wide reverse bias safe operating area

(RBSOA) plus 10μs short circuit withstand. This

device is optimised for traction drives and other

applications requiring high thermal cycling capability.

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety

5(C )

3(C1)

4(E2)

8(E )

Fig. 1 Circuit configuration

ORDERING INFORMATION

Order As:

DIM500GDM33-TL000

Outline type code: G

Note: When ordering, please use the complete part

number

(See Fig. 11 for further information)

Fig. 2 Package

Caution:

This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

www.dynexsemi.com

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