DIM800DCM17-A000
IGBT Chopper Module
Replaces DS5444-4.2
DS5444-5 April 2011 (LN26752)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated AlSiC Base With AlN Substrates
Lead Free Construction
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
1700V
2.7V
800A
1600A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
1(E)
5(E)
2(K)
High Reliability Inverters
Motor Controllers
Traction Drives
6(G)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
3300V and currents up to 2400A.
The DIM800DCM17-A000 is a 1700V, n-channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module. The IGBT has a wide reverse
bias safe operating area (RBSOA) plus 10μs short
circuit withstand. This device is optimised for traction
drives and other applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
7(C)
3(C)
4(A)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM800DCM17-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1
/
8
www.dynexsemi.com
DIM800DCM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value (IGBT arm)
Diode I t value (Diode arm)
Isolation voltage – per module
Partial discharge – per module
2
2
Test Conditions
V
GE
= 0V
Max.
1700
±20
Units
V
V
A
A
W
kA s
kA s
V
pC
2
2
T
case
= 75°C
1ms, T
case
= 110°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
800
1600
6940
120
270
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 1800V, V
2
= 1300V, 50Hz RMS
4000
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor (per arm)
Thermal resistance – diode (IGBT arm)
Thermal resistance – diode (Diode arm)
Thermal resistance – case to heatsink
(per module)
Junction temperature
Diode
Storage temperature range
-
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
2/8
-
-40
-
-
-
-
-
-
-
-
125
125
5
2
10
°C
°C
Nm
Nm
Nm
AlN
AlSiC
20mm
10mm
350
Test Conditions
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Min
-
-
Typ.
-
-
Max
18
40
26.7
-
-
-
-
8
150
Units
°C/kW
°C/kW
°C/kW
°C/kW
°C
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM800DCM17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
†
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Min
Typ
Max
1
25
4
Units
mA
mA
μA
V
V
V
A
A
Gate leakage current
Gate threshold voltage
Collector-emitter saturation
voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT arm)
Diode forward voltage
(Diode arm)
Diode forward voltage
(IGBT arm)
Diode forward voltage
(Diode arm)
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance – per arm
Internal transistor resistance –
per arm
V
GE
= ± 20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, T
j
= 125°C
DC
t
p
= 1ms
I
F
= 800A
2.0
2.3
I
F
= 800A, T
j
= 125°C
2.0
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
20
270
T
j
= 125°C, V
CC
= 1000V
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
4.5
5.5
2.7
3.4
800
1600
2.2
6.5
3.2
4.0
2.5
2.3
2.6
2.3
V
V
V
V
nF
μC
nF
nH
μ
V
F
†
C
ies
Q
g
C
res
L
M
R
INT
60
9
SC
Data
Short circuit current, I
SC
3200
A
Note:
†
Measured at the power busbars, not the auxiliary terminals
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3
/
8
www.dynexsemi.com
DIM800DCM17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
IGBT arm
I
F
= 800A
V
CE
= 900V
dI
F
/dt = 4000A/μs
Diode arm
I
F
= 800A
V
CE
= 900V
dI
F
/dt = 4000A/μs
I
C
= 800A
V
GE
= ±15V
V
CE
= 900V
R
G(ON)
= 2.2
R
G(OFF)
= 2.2
L
S
~ 100nH
230
250
250
275
200
460
130
250
530
160
mJ
ns
ns
mJ
μC
A
mJ
μC
A
mJ
Test Conditions
Min
Typ.
1250
170
Max
Units
ns
ns
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
Min
Typ.
1500
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Q
rr
I
rr
E
rec
I
C
= 800A
V
GE
= ±15V
V
CE
= 900V
R
G(ON)
= 2.2
R
G(OFF)
= 2.2
L
S
~ 100nH
IGBT arm
I
F
= 800A
V
CE
= 900V
dI
F
/dt = 4000A/μs
Diode arm
I
F
= 800A
V
CE
= 900V
dI
F
/dt = 4000A/μs
200
360
400
250
425
330
530
200
425
600
250
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM800DCM17-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5
/
8
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
