3
DIM800DCS12-A000
Replaces DS5839-1.1
11.5
±0.2
IGBT Chopper Module
DS5839-2 July 2014 (LN31760)
FEATURES
±0.2
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Cu Base With Al
2
O
3
Substrates
Lead Free Construction
16
6 x
O7
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
14
±0.2
28
±0.5
1200V
2.2V
screwing depth
800A
max 8
1600A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
55.2
± 0.3
High
±0.2
11.85
Reliability Inverters
Motor Controllers
1(E)
5
(E)
6
(G)
2(C)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM800DCS12-A000 is a dual switch 1200V, n-
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
7
(C)
3(C)
4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM800DCS12-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1
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DIM800DCS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value (IGBT arm)
Diode I t value (Diode arm)
Isolation voltage – per module
2
2
Test Conditions
V
GE
= 0V
Max.
1200
±20
Units
V
V
A
A
W
kA s
kA s
V
2
2
T
case
= 85°C
1ms, T
case
= 115°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
800
1600
6940
100
225
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
2500
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Al
2
O
3
Cu
20mm
10mm
>600
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor (per arm)
Thermal resistance – diode (IGBT arm)
Thermal resistance – diode (Diode arm)
Thermal resistance – case to heatsink
(per module)
Junction temperature
Test Conditions
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Min
-
-
Typ.
-
-
Max
18
40
27
Units
°C/kW
°C/kW
-
-
-
-40
-
-
-
-
-
-
-
-
-
-
8
150
125
125
5
2
10
°C/kW
°C
°C
°C
Nm
Nm
Nm
Storage temperature range
-
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCS12-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
Parameter
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Gate leakage current
Gate threshold voltage
Collector-emitter saturation
voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT arm)
Diode forward voltage
(Diode arm)
Diode forward voltage
(IGBT arm)
Diode forward voltage
(Diode arm)
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance – per arm
Internal transistor resistance –
per arm
T
j
= 125°C, V
CC
= 900V
SC
Data
Short circuit current, I
SC
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
Test Conditions
V
GE
= 0V, V
CE
= V
CES
Min
Typ
Max
1
25
4
Units
mA
mA
μA
V
V
V
A
A
V
V
V
V
nF
μC
nF
V
GE
= ± 20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, T
VJ
= 125°C
DC
t
p
= 1ms
2.1
I
F
= 800A
1.8
2.1
I
F
= 800A, T
VJ
= 125°C
1.7
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
20
270
90
9
4.5
5.5
2.2
2.6
6.5
2.8
3.2
800
1600
2.4
2.1
2.4
2.0
V
F
C
ies
Q
g
C
res
L
M
R
INT
nH
μ
4500
A
Note:
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3
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8
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DIM800DCS12-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Diode arm
I
F
= 800A
V
CE
= 600V
dI
F
/dt = 4200A/μs
I
C
= 800A
V
GE
= ±15V
V
CE
= 600V
R
G(ON)
= 2.7
R
G(OFF)
= 2.7
L
S
~ 100nH
130
250
250
80
12
570
60
mJ
ns
ns
mJ
μC
A
mJ
Test Conditions
Min
Typ.
1250
170
Max
Units
ns
ns
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
Min
Typ.
1500
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
I
C
= 800A
V
GE
= ±15V
V
CE
= 600V
R
G(ON)
= 2.7
R
G(OFF)
= 2.7
L
S
~ 100nH
Diode arm
I
F
= 800A
V
CE
= 600V
dI
F
/dt = 4000A/μs
200
160
400
220
120
240
680
110
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCS12-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector
current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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8
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