DFM1200EXS12-A000
Fast Recovery Diode Module
Replaces DS5851-1.2
DS5851-2 August 2011 (LN28651)
FEATURES
Low Reverse Recovery Charge
High Switching Speed
Low Forward Volt Drop
Isolated Cu Base with Al
2
O
3
Substrates
Triple Diodes can be paralleled for 3600A rating
Lead Free Construction
KEY PARAMETERS
V
RRM
V
F
I
F
I
FM
(typ)
(max)
(max)
1200V
1.9V
1200A
2400A
9(K1)
7(K2)
5(K3)
APPLICATIONS
Chopper Diodes
Boost and Buck Converters
Free-wheel Circuits
Snubber Circuits
Resonant Converters
Induction Heating
Multi-level Switch Inverters
External connection required for a single 3600A diode
8(A1)
6(A2)
4(A3)
The DFM1200EXS12-A000 is a triple 1200V, fast
recovery diode (FRD) module. Designed for low
power loss, the module is suitable for a variety of high
voltage applications in motor drives and power
conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation, making the device
suitable for the latest drive designs employing PWM
and high frequency switching.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DFM1200EXS12-A000
Note: When ordering, please use the complete part
number
Outline type code: E
(See Fig. 7 for further information)
Fig. 2 Package
1
/
7
www.dynexsemi.com
DFM1200EXS12-A000
ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
It
P
max
V
isol
2
Parameter
Repetitive peak reverse voltage
Forward current
Max. forward current
I t value fuse current rating
Max. transistor power dissipation
Isolation voltage – per module
2
Test Conditions
T
j
= 125°C
DC, T
case
= 75°C, T
j
= 125°C
T
case
= 110°C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
j
= 125°C
T
case
= 25°C, T
j
= 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max.
1200
1200
2400
400
7520
2500
Units
V
A
A
kA s
W
V
2
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance (per arm)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Storage temperature range
Mounting – M6
Screw Torque
Electrical connections – M8
Al
2
O
3
Cu
33mm
20mm
>600
Test Conditions
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Min
-
-
-
-40
-
-
Typ.
-
-
-
-
-
-
Max
20
6
125
125
5
10
Units
°C/kW
°C/kW
°C
°C
Nm
Nm
2/7
www.dynexsemi.com
DFM1200EXS12-A000
STATIC ELECTRICAL CHARACTERISTICS – PER ARM
T
case
= 25°C unless stated otherwise.
Symbol
I
RM
V
F
L
M
Parameter
Peak reverse current
Forward voltage
I
F
= 1200A, T
j
= 125°C
Inductance
2.1
20
2.4
V
nH
Test Conditions
V
R
= 1200V, T
j
= 125°C
I
F
= 1200A
1.9
Min
Typ
Max
30
2.2
Units
mA
V
STATIC ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
L
M
Parameter
Module inductance
(externally connected in parallel)
Test Conditions
Min
Typ
15
Max
Units
nH
DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM
T
case
= 25°C unless stated otherwise
Symbol
Q
rr
I
rr
E
rec
Parameter
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
Test Conditions
I
F
= 1200A
V
R
= 600V
dI
F
/dt = 9000A/μs
Min
Typ.
200
800
80
Max
Units
μC
A
mJ
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
Test Conditions
I
F
= 1200A
V
R
= 600V
dI
F
/dt = 8400A/μs
Min
Typ.
300
920
140
Max
Units
μC
A
mJ
Q
rr
I
rr
E
rec
3
/
7
www.dynexsemi.com
DFM1200EXS12-A000
Fig. 3 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 DC Current rating vs case temperature
Fig. 6 RBSOA
4/7
www.dynexsemi.com
DFM1200EXS12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
6 x M8
190
±0.5
171
±0.15
57
±0.1
screwing depth
max. 16
7
140
±0.5
124
±0.1
40
±0.2
20
±0.1
40
±0.2
20.25
±0.2
3 x M4
79.4
±0.2
41.25
±0.2
5.2
±0.2
8 x
Ø
7
28
±0.5
screwing depth
max. 8
61.5
±0.3
13
±0.2
61.5
±0.3
38
±0.5
5
±0.2
external connection
external connection
external connection
5(C)
3(C)
2(G)
7(C)
9(C)
3(C)
2(G)
7(C)
9(C)
5(C)
5(C)
7(C)
9(C)
1(E)
1(E)
4(E)
6(E)
8(E)
6(E)
8(E)
4(E)
4(E)
6(E)
8(E)
external connection
Nominal Weight:
connection
external
2250g
Module Outline Type Code:
DIM....ECM.......
external connection
DIM....ESM.......
E
DFM....EXM.......
Fig. 7 Module outline drawing
5
/
7
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
