LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 Volts
N–Channel SC70
•
•
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
L2N7002FWT1G
S-L2N7002FWT1G
3
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
FEATURES
●
R
DS(ON)
≦
8Ω@V
GS
=4V
●
R
DS(ON)
≦
13Ω@V
GS
=2.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
●
Capable doing Cu wire bonding
●
ESD Protected:1000V
Gate
1
2
SC–70
Simplified Schematic
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
Load Switch
(Top View)
Source
2
3
Drain
ORDERING INFORMATION
Device
L2N7002FWT1G
S-L2N7002FWT1G
L2N7002FWT3G
S-L2N7002FWT3G
7F
10000 Tape & Reel
Marking
7F
Shipping
3000 Tape & Reel
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J,
T
stg
417
-55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Gate
7F
M
1
7F
M
Source
2
R
θJA
P
D
= Device Code
=Month Code
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
L2N7002FWT1G,S-L2N7002FWT1G
Absolute Maximum Ratings
(T
A
=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
Maximum Ratings
30
±20
Unit
V
V
Electrical Characteristics
(T
j
=25℃ Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
V
SD
DYNAMIC
Qg
Qgs
Qgd
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=5V, R
L
=500Ω
V
GES
=5V,R
G
=10Ω
V
DS
=25V, V
GS
=0V, f=1MHz
V
DS
=25V, V
GS
=10V, I
D
=0.22A
4.9
2.1
0.6
21
10
2
10.1
7.3
31.3
28.2
ns
pF
nC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
Diode Forward Voltage *
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=0V, V
GS
=±20V
V
DS
=30V, V
GS
=0V
V
GS
=4V, I
D
=10mA
V
GS
=2.5V, I
D
=1mA
I
S
=200mA, V
GS
=0V
5
7
30
0.8
1.5
±10
1
8
13
1.2
V
V
μA
μA
Ω
V
Parameter
Limit
Min
Typ
Max
Unit
t
d(on)
t
r
t
d(off)
t
f
Notes:
*
. Pulse test; pulse width
≦
300us, duty cycle≦ 2%.
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
L2N7002FWT1G,S-L2N7002FWT1G
Typical Characteristics (T
J
=25℃ Noted)
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
L2N7002FWT1G,S-L2N7002FWT1G
Typical Characteristics (T
J
=25℃ Noted)
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
L2N7002FWT1G,S-L2N7002FWT1G
SC−70 (SOT−323)
D
e1
3
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
H
E
1
2
E
b
e
2.00
0.079
0.095
A
0.05 (0.002)
A2
L
c
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
Rev .O 5/5
京公网安备 11010802033920号
EEWORLD
