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RJK2017DPP_15

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size208KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJK2017DPP_15 Overview

Silicon N Channel MOS FET High Speed Power Switching

Preliminary
Datasheet
RJK2017DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.036
Ω
typ. (at I
D
= 22.5 A, V
GS
= 10 V, Ta = 25°C)
Low leakage current
High speed switching
R07DS0416EJ0300
(Previous: REJ03G1797-0200)
Rev.3.00
Jun 07, 2011
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10
μs,
duty cycle
1%
Value at Tc = 25°C
STch = 25°C, Tch
150°C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
Note4
I
D
I
D (pulse)
I
DR
Note3
I
AP
Note3
E
AR
Pch
Note2
θch-c
Tch
Tstg
Note1
Ratings
200
±30
45
135
45
12
9.6
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0416EJ0300 Rev.3.00
Jun 07, 2011
Page 1 of 6
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