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RJP63F3DPP-M0_15

Description
Silicon N Channel IGBT High Speed Power Switching
File Size175KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJP63F3DPP-M0_15 Overview

Silicon N Channel IGBT High Speed Power Switching

Preliminary
Datasheet
RJP63F3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H series)
Low collector to emitter saturation voltage V
CE(sat)
= 1.7 V typ
High speed switching tf = 100 ns typ
Low leak current I
CES
= 1
μA
max
Isolated package TO-220FL
R07DS0321EJ0200
Rev.2.00
May 26, 2011
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
2. Tc = 25°C
Symbol
V
CES
V
GES
I
C
ic(peak)
Note1
P
C Note2
θj-c
Tj
Tstg
Ratings
630
±30
40
200
30
4.17
150
–55 to +150
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 1 of 6
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