LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
Collector current capability I
C
= -500 mA.
Collector-emitter voltage V
CEO
(max) = -45 V.
General purpose switching and amplification.
PNP complement: LBC807 Series.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
3
1
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC807-16LT1G
S-LBC807-16LT1G
LBC807-16LT3G
S-LBC807-16LT3G
LBC807-25LT1G
S-LBC807-25LT1G
LBC807-25LT3G
S-LBC807-25LT3G
LBC807-40LT1G
S-LBC807-40LT1G
LBC807-40LT3G
S-LBC807-40LT3G
Marking
5A1
5A1
5B1
5B1
5C1
5C1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
2
SOT–23
3
COLLECTOR
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
2
EMITTER
1
BASE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R
θJA
T
J
, T
stg
R
θJA
P
D
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
Symbol
P
D
225
1.8
556
mW
mW/°C
°C/W
Max
Unit
Rev.O 1/10
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G
S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= –10
µA)
V
(BR)CES
–50
—
—
V
V
(BR)CEO
–45
—
—
V
Emitter–Base Breakdown Voltage
(I
E
= –1.0
µA)
Collector Cutoff Current
(V
CB
= –20 V)
(V
CB
= –20 V, T
J
= 150°C)
V
(BR)EBO
I
CBO
—
—
—
—
–100
–5.0
nA
µA
–5.0
—
—
V
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –100 mA, V
CE
= –1.0 V)
h
FE
LBC807–16
LBC807–25
LBC807–40
(I
C
= –500 mA, V
CE
= –1.0 V)
Collector–Emitter Saturation Voltage
(I
C
= –500 mA, I
B
= –50 mA)
Base–Emitter On Voltage
(I
C
= –500 mA, V
CE
= –1.0 V)
V
V
CE(sat)
—
100
160
250
40
—
—
—
—
—
—
250
400
600
—
–0.7
V
BE(on)
—
—
–1.2
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 V
dc
, f = 100 MHz)
Output Capacitance
(V
CB
= –10 V, f = 1.0 MHz)
f
T
C
obo
100
—
—
10
—
—
MHz
pF
Rev.O 2/10
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G
S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
TYPICAL CHARACTERISTICS
−LBC807
−16LT1G
500
400
300
25°C
200
−55°C
100
0
150°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
1
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
Rev.O 3/10
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G
S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
TYPICAL CHARACTERISTICS
−
LBC807−16LT1G
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
T
J
= 25°C
-0.8
I
C
=
-500 mA
-0.6
-0.4
I
C
= -300 mA
-0.2
I
C
= -10 mA
0
-0.01
-0.1
I
C
= -100 mA
-1.0
-10
I
B
, BASE CURRENT (mA)
-100
Figure 5. Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+1.0
q
VC
for V
CE(sat)
0
100
C, CAPACITANCE (pF)
C
ib
10
-1.0
-2.0
q
VB
for V
BE
C
ob
-1.0
-10
-100
I
C
, COLLECTOR CURRENT
-1000
1.0
-0.1
-10
-1.0
V
R
, REVERSE VOLTAGE (VOLTS)
-100
Figure 6. Temperature Coefficients
Figure 7. Capacitances
Rev.O 4/10
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G
S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
TYPICAL CHARACTERISTICS
−
LBC807−25LT1G
500
400
300
200
−55°C
100
0
25°C
150°C
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
150°C
25°C
0.1
−55°C
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
Figure 11. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (A)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
Rev.O 5/10
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