LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC85** DW1T1G
S-LBC85** DW1T1G
6
5
4
1
2
3
SOT-363
(3)
(2)
(1)
•
Device Marking:
(S-)LBC856ADW1T1G= 3A
(S-)LBC856BDW1T1G= 3B
(S-)LBC857BDW1T1G= 3F
(S-)LBC857CDW1T1G= 3G
(S-)LBC858BDW1T1G= 3K
(S-)LBC858CDW1T1G = 3L
Q
1
Q
2
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
DEVICE MARKING
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
P
D
Max
380
250
Unit
mW
See Table
3.0
R
qJA
T
J
, T
stg
328
–55 to +150
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
LBC85*BDW1T1G
LBC85*BDW1T3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
V
(BR)CBO
LBC856 Series
LBC857 Series
LBC858 Series
V
(BR)EBO
LBC856 Series
LBC857 Series
LBC858 Series
I
CBO
–5.0
–5.0
–5.0
–
–
–
–
–
–
–
–
–
–
–15
–4.0
nA
µA
–80
–50
–30
–
–
–
–
–
–
V
V
(BR)CEO
–65
–45
–30
V
(BR)CES
–80
–50
–30
–
–
–
–
–
–
V
–
–
–
–
–
–
V
V
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= –10
mA)
Emitter–Base Breakdown Voltage
(I
E
= –1.0
mA)
Collector Cutoff Current (V
CB
= –30 V)
Collector Cutoff Current
(V
CB
= –30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= –10
µA,
V
CE
= –5.0 V)
(I
C
= –2.0 mA, V
CE
= –5.0 V)
LBC856A
LBC856B, LBC857B, LBC858B
LBC857C, LBC858C
h
FE
–
–
–
125
220
420
V
CE(sat)
–
–
V
BE(sat)
–
–
V
BE(on)
–0.6
–
–
–
–0.75
–0.82
–0.7
–0.9
–
–
V
–
–
–0.3
–0.65
V
90
150
270
180
290
520
–
–
–
250
475
800
V
–
LBC856A
LBC856B, LBC857B, LBC858B
LBC857C, LBC858C
Collector–Emitter Saturation Voltage
(I
C
= –10 mA, I
B
= –0.5 mA)
(I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter Saturation Voltage
(I
C
= –10 mA, I
B
= –0.5 mA)
(I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter On Voltage
(I
C
= –2.0 mA, V
CE
= –5.0 V)
(I
C
= –10 mA, V
CE
= –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= –10 V, f = 1.0 MHz)
Noise Figure
(I
C
= –0.2 mA, V
CE
= –5.0 Vdc, R
S
= 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
f
T
C
ob
NF
100
–
–
–
–
–
–
4.5
10
MHz
pF
dB
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
TYPICAL CHARACTERISTICS –
LBC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= -5.0 V
T
A
= 25°C
2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
T
J
= 25°C
-0.8
-0.6
-0.4
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
-0.2
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
I
C
, COLLECTOR CURRENT (mA)
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= -5.0 V
Figure 1. DC Current Gain
-2.0
-1.6
-1.2
-0.8
-0.4
T
J
= 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
I
B
, BASE CURRENT (mA)
-5.0
-10
-20
I
C
=
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-0.2
Figure 2. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VB
for V
BE
-55°C to 125°C
-0.5 -1.0
-50
-5.0 -10 -20
-2.0
I
C
, COLLECTOR CURRENT (mA)
-100 -200
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
T
J
= 25°C
C
ib
500
200
100
50
20
V
CE
= -5.0 V
C, CAPACITANCE (pF)
20
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
ob
-0.5
-5.0 -10 -20
-1.0 -2.0
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current–Gain – Bandwidth Product
Rev.O 3/6
LESHAN RADIO COMP ANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
TYPICAL CHARACTERISTICS –
LBC857/LBC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 7. Normalized DC Current Gain
-2.0
T
A
= 25°C
-1.6
-1.2
-0.8
-0.4
0
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -20 mA
I
C
= -200 mA
I
C
= -100 mA
1.0
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
1.2
1.6
2.0
2.4
2.8
Figure 8. “Saturation” and “On” Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
-55°C to +125°C
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 9. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
3.0
2.0
C
ob
C
ib
T
A
= 25°C
400
300
200
150
100
80
60
40
30
20
-0.5
Figure 10. Base–Emitter Temperature
Coefficient
V
CE
= -10 V
T
A
= 25°C
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current–Gain – Bandwidth Product
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.001
SINGLE PULSE
0
1.0
10
100
t, TIME (ms)
1.0 k
10 k
100 k
1.0 M
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
θJC
(t)
0.1
Figure 13. Thermal Response
-200
IC, COLLECTOR CURRENT (mA)
-100
-50
T
A
= 25°C
1s
T
J
= 25°C
3 ms
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid
for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
-10
-5.0
-2.0
-1.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
Rev.O 5/6
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