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L9015QLT1G_15

Description
General Purpose Transistors
File Size149KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet View All

L9015QLT1G_15 Overview

General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
Complementary to L9014.
L9015QLT1G
Series
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-L9015QLT1G
Series
3
DEVICE MARKING AND ORDERING INFORMATION
Device
L9015QLT1G
S-L9015QLT1G
L9015QLT3G
S-L9015QLT3G
L9015RLT1G
S-L9015RLT1G
L9015RLT3G
S-L9015RLT3G
L9015SLT1G
S-L9015SLT1G
L9015SLT3G
S-L9015SLT3G
Marking
15Q
15Q
15R
15R
15S
15S
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
SOT– 23
1
2
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-45
-50
-5
-100
Unit
V
V
V
mA
2
EMITTER
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board.(1)
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25
o
C
Derate above 25
o
C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
o
o
Symbol
P
D
Max
Unit
225
1.8
R
JA
P
D
300
2.4
R
JA
T
J
,T
stg
417
-55 to +150
556
mW
mW/
o
C
o
C
/
W
mW
mW/
o
C
o
C
/
W
o
C
Rev.O 1/4

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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