LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
•
Moisture Sensitivity Level: 1
•
ESD Rating – Human Body Model: >4000 V
•
We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector Current – Continuous
IC
VEBO
6.0
6.0
5.0
100
mAdc
VCBO
80
50
30
Vdc
2
EMIT T ER
1
LBC846AWT1G
Series
3
ESD Rating
– Machine Model: >400 V
Symbol
VCEO
Value
65
45
30
Unit
Vdc
2
SOT–323 /SC–70
Vdc
3
COLLECT OR
1
B ASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
Junction and Storage
Temperature Range
Symbol
PD
Max
150
Unit
mW
MARKING DIAGRAM
3
xx
2.4
R
qJA
TJ, Tstg
833
–55 to
+150
mW/°C
°C/W
°C
xx= Device Marking
(See Table Below)
1/6
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
LBC846A,B
(IC = 10 mA)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
Collector–Emitter Breakdown Voltage
LBC846A,B
(IC = 10
µA,
VEB = 0)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
Collector–Base Breakdown Voltage
(IC = 10
mA)
Emitter–Base Breakdown Voltage
(IE = 1.0
mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
ICBO
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10
µA,
VCE = 5.0 V)
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B,
LBC849B, LBC850B
LBC847C, LBC848C, LBC849C, LBC850C
VCE(sat)
VBE(sat)
VBE(on)
hFE
–
–
–
110
200
420
–
–
–
–
580
–
90
150
270
180
290
520
–
–
0.7
0.9
660
–
–
–
–
220
450
800
0.25
0.6
–
–
700
770
V
V
mV
–
(IC = 2.0 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
(VCE = 5.0 Vdc, RS = 2.0 kΩ
f = 1.0 kHz, BW = 200 Hz)
LBC846A,B, LBC847A,B,C, LBC848A,B,C
LBC849B,C, LBC850B,C
fT
Cobo
NF
–
–
–
–
10
4.0
100
–
–
–
–
4.5
MHz
pF
dB
3/6
3456
6 456
08
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