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LBC850BWT1G_15

Description
General Purpose Transistors
File Size276KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet View All

LBC850BWT1G_15 Overview

General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector Current – Continuous
IC
VEBO
6.0
6.0
5.0
100
mAdc
VCBO
80
50
30
Vdc
2
EMIT T ER
1
LBC846AWT1G
Series
3
ESD Rating
– Machine Model: >400 V
Symbol
VCEO
Value
65
45
30
Unit
Vdc
2
SOT–323 /SC–70
Vdc
3
COLLECT OR
1
B ASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
Junction and Storage
Temperature Range
Symbol
PD
Max
150
Unit
mW
MARKING DIAGRAM
3
xx
2.4
R
qJA
TJ, Tstg
833
–55 to
+150
mW/°C
°C/W
°C
xx= Device Marking
(See Table Below)
1/6
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