UF28100H
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Features
M/A-COM Products
Released - Ver 08.07
PACKAGE OUTLINE
•
•
•
•
•
•
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than competitive devices
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
12*
250
200
-55 to +150
0.7
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
100
300
500
Z
IN
(Ω)
4.5-j6.0
2.25-j1.75
1.5+j5.5
Z
LOAD
(Ω)
14.5+j0.5
7.5j1.0
3.5+j3.5
V
DD
=28V, I
DQ
=600 Ma, P
OUT
=100.0 W
Z
IN
is the series equivalent input impedance of the device from gate to gate.
Z
LOAD
is the optimum series equivalent load impedance as measured from drain
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
*Per side
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
R
L
VSWR-T
Min
65
-
-
2.0
1.5
-
-
-
10
50
10
-
Max
-
3.0
3.0
6.0
-
135
90
24
-
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
dB
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 15.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 300.0 mA
V
DS
= 10.0 V , I
DS
3000.0 mA ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 600.0 mA, P
OUT
= 100.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 600.0 mA, P
OUT
= 100.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 600.0 mA, P
OUT
= 100.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 600.0 mA, P
OUT
= 100.0 W F =500 MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF28100H
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Typical Broadband Performance Curves
EFFICIENCY
VS
FREQUENCY
P
IN
=10W I
DD
=600 mA (Push pull device)
POPWER OUTPUT (W)
M/A-COM Products
Released - Ver 08.07
POWER OUTPUT
VS
SUPPLY VOLTAGE
P
IN
=10 W I
DQ
=600 mA F=500 MHz
80
70
60
50
40
100
120
100
80
60
40
20
0
14
EFFICIENCY (%)
200
300
400
500
16
20
24
28
32
FREQUENCY (MHz)
SUPPLY VOLTAGE (V)
POWER OUTPUT
VS
POWER INPUT
V
DD
=28 V I
DQ
=600 mA (Push pull device)
120
POWER OUTPUT (W)
100
80
60
40
20
0
0
1
2
4
6
8
10
12
POWER INPUT (W)
300MHz
200MHz
400MHz
500MHz
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF28100H
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products
Released - Ver 08.07
TEST FIXTURE ASSEMBLY
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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