LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SA1774QT1G
Series
S-L2SA1774QT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SA1774QT1G
S-L2SA1774QT1G
L2SA1774QT3G
S-L2SA1774QT3G
L2SA1774RT1G
S-L2SA1774RT1G
L2SA1774RT3G
S-L2SA1774RT3G
L2SA1774ST1G
S-L2SA1774ST1G
L2SA1774ST3G
S-L2SA1774ST3G
Marking
FQ
FQ
FR
FR
FS
FS
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
COLLECTOR
3
SC-89
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−60
−50
−6
−0.15
Unit
V
V
V
A (DC)
1
BASE
2
EMITTER
P
C
0.15
W
Tj
Tstg
150
−55~+150
˚C
˚C
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−6
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5.0
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=−50µA
I
C
=−1µA
I
E
=−50µA
V
CB
=−60V
V
EB
=−6V
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V,
I
C
=−1mA
V
CE
=−12V,
I
E
=
2mA, f
=
30MHz
V
CB
=−12V,
I
E
=
0A, f
=
1MHz
Conditions
!
h
FE
values are classified as follows:
Item
h
FE
Q
120~270
R
180~390
S
270~560
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
!
Electrical characteristic curves
−50
COLLECTOR CURRENT : Ic (
mA)
L2SA1774QT1G
Series
S-L2SA1774QT1G
Series
−10
−35.0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA)
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
COLLECTOR CURRENT : I
C
(
mA
)
Ta=100˚C
25˚C
−40˚C
V
CE
=−6V
−100
−31.5
−28.0
−24.5
Ta=25˚C
−500
−450
−400
−350
−300
−8
−80
−6
−21.0
−17.5
−60
−250
−200
−4
−14.0
−10.5
−40
−150
−100
−2
−7.0
−3.5µA
−20
−50µA
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
0
−0.4
−0.8
−1.2
−1.6
I
B
=0
−2.0
I
B
=0
0
−1
−2
−3
−4
−5
BASE TO EMITTER VOLTAGE : V
BE
(
V)
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
500
500
Ta=25˚C
V
CE
=−5V
−3V
−1V
DC CURRENT GAIN : h
FE
200
Ta=100˚C
25˚C
−40˚C
−1
Ta=25˚C
DC CURRENT GAIN : h
FE
−0.5
200
100
−0.2
I
C
/I
B
=50
−0.1
20
10
100
50
50
V
CE
=−6V
−5 −10 −20 −50 −100
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs.
collector current (I)
Fig.5 DC current gain vs.
collector current (II)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
l
C
/l
B
=10
−0.5
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
=−12V
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
−1
1000
20
Cib
10
500
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
Co
b
−0.2
Ta=100˚C
25˚C
−40˚C
200
5
−0.1
100
2
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
50
0.5
1
2
5
10
20
50
100
−0.5
−1
−2
−5
−10
−20
COLLECTOR CURRENT : I
C
(
mA)
EMITTER CURRENT : I
E
(
mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
L2SA1774QT1G
Series
S-L2SA1774QT1G
Series
SC-89
A
-X-
3
1
2
B -Y-
S
K
G
2 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
MILLIMETERS
MIN
NOM
MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10
_
−−−
−−−
10
_
1.50
1.60
1.70
INCHES
NOM
0.063
0.034
0.028
0.011
0.020 BSC
0.021 REF
0.006
0.016
0.043 REF
−−−
−−−
0.063
D
0.08 (0.003)
M
3 PL
X Y
M
C
N
J
-T-
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
M
N
S
MIN
0.059
0.030
0.024
0.009
0.004
0.012
−−−
−−−
0.059
MAX
0.067
0.040
0.031
0.013
0.008
0.020
10
_
10
_
0.067
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 3/3
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