M5M256DP-55LL-I datasheet, PDF

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M5M256DP-55LL-I: DescriptionStandard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28; Categorystorage storage; File Size45KB，7 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M256DP-55LL-I Overview

Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28

M5M256DP-55LL-I Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	55 ns
JESD-30 code	R-PDIP-T28
length	36.7 mm
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.5 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

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'97.4.7

MITSUBISHI LSIs

M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I,

-45XL-I,-55XL-I,-70XL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION

The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs

organized as 32,768-words by 8-bits which is fabricated using

high-performance 3 polysilicon CMOS technology. The use of

resistive load NMOS cells and CMOS periphery results in a high

density and low power static RAM. Stand-by current is small

enough for battery back-up application. It is ideal for the memory

systems which require simple interface.

Especially the M5M5256DVP,RV are packaged in a 28-pin thin

small outline package.Two types of devices are available,

M5M5256DVP(normal lead bend type package),

M5M5256DRV(reverse lead bend type package). Using both types of

devices, it becomes very easy to design a printed circuit board.

PIN CONFIGURATION (TOP VIEW)

A14

A12

DQ1 11

DQ2 12

DQ3 13

GND 14

Vcc

A13

A11

/OE

A10

DQ8

DQ7

DQ6

DQ5

DQ4

M5M5256DP,KP,FP

-I

FEATURE

Type

Access Power supply current

time

Active Stand-by

(max)

45ns

55ns

70ns

45ns

55ns

70ns

55mA

(Vcc=5.5V)

M5M5256DP, KP, FP,VP,RV-45LL

M5M5256DP, KP, FP,VP,RV-55LL

M5M5256DP, KP, FP,VP,RV-70LL

M5M5256DP, KP, FP,VP,RV-45XL

M5M5256DP, KP, FP,VP,RV-55XL

M5M5256DP, KP, FP,VP,RV-70XL

Outline 28P4 (DP)

28P4Y (DKP)

28P2W-C (DFP)

22 /OE

23 A11

24 A9

25 A8

26 A13

27 /W

28Vcc

1 A14

2 A12

3 A7

4 A6

5 A5

6 A4

7 A3

A10 21

/S 20

DQ8 19

DQ7 18

DQ6 17

DQ5 16

DQ415

GND 14

DQ3 13

DQ2 12

DQ1 11

A0 10

A1 9

A2 8

40µA

(Vcc=5.5V)

10µA

(Vcc=5.5V)

0.05µA

(Vcc=3.0V,

Typical)

M5M5256DVP

-I

•Single +5V power supply

•No clocks, no refresh

•Data-Hold on +2.0V power supply

•Directly TTL compatible : all inputs and outputs

•Three-state outputs : OR-tie capability

•/OE prevents data contention in the I/O bus

•Common Data I/O

•Battery backup capability

•Low stand-by current··········0.05µA(typ.)

Outline 28P2C-A (DVP)

7 A3

6 A4

5 A5

4 A6

3 A7

2 A12

1 A14

28 Vcc

27 /W

26 A13

25 A8

24 A9

23 A11

22 /OE

A2 8

A1 9

A0 10

DQ1 11

DQ2 12

DQ3 13

GND 14

DQ4 15

DQ5 16

DQ6 17

DQ7 18

DQ8 19

/S 20

A10 21

PACKAGE

M5M256DP

: 28 pin

M5M5256DKP

: 28 pin

M5M5256DFP

: 28 pin

M5M5256DVP,RV : 28pin

600 mil DIP

300 mil DIP

450 mil SOP

8 X 13.4 mm

M5M5256DRV

-I

TSOP

APPLICATION

Small capacity memory units

Outline 28P2C-B (DRV)

MITSUBISHI

ELECTRIC

M5M256DP-55LL-I Related Products

	M5M256DP-55LL-I	M5M256DP-70LL-I	M5M256DP-70XL-I	M5M256DP-45XL-I	M5M256DP-45LL-I	M5M256DP-55XL-I
Description	Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, DIP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, DIP-28	Standard SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.600 INCH, DIP-28	Standard SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.600 INCH, DIP-28	Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,
Contacts	28	28	28	28	28	28
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	55 ns	70 ns	70 ns	45 ns	45 ns	55 ns
JESD-30 code	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28
length	36.7 mm	36.7 mm	36.7 mm	36.7 mm	36.7 mm	36.7 mm
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bi	262144 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.5 mm	5.5 mm	5.5 mm	5.5 mm	5.5 mm	5.5 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm

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