GaN Wideband 90 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Features
GaN on SiC D-Mode Transistor Technology
Unmatched, Ideal for Pulsed Applications
50 V Typical Bias, Class AB
Common-Source Configuration
Thermally-Enhanced 3 x 6 mm 14-Lead DFN
MTTF = 600 years (T
J
< 200°C)
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
MSL-1
Rev. V3
Description
The MAGX-000035-09000P is a GaN on SiC
unmatched power device offering the widest RF
frequency capability, most reliable high voltage
operation, lowest overall power transistor size, cost
and weight in a “TRUE SMT” plastic-packaging
technology.
Use of an internal stress buffer technology allows
reliable operation at junction temperatures up to
200°C. The small package size and excellent RF
performance make it an ideal replacement for costly
flanged or metal-backed module components.
Functional Schematic
1
2
3
4
NC
G
15
D
G
G
15
D
NC
14
13 12
11 10
9
8
G
G
G
5
6
7
Ordering Information
1,2
Part Number
MAGX-000035-09000P
MAGX-000035-0900TP
MAGX-000035-PB3PPR
Package
Bulk Packaging
100 Piece Reel
Sample Board
Pin Configuration
3
Pin No.
1
2
3
4
5
6
7
Function
V
GG
/RF
IN
V
GG
/RF
IN
V
GG
/RF
IN
No Connection
V
GG
/RF
IN
V
GG
/RF
IN
V
GG
/RF
IN
Pin No.
8
9
10
11
12
13
14
15
Function
V
DD
/RF
OUT
V
DD
/RF
OUT
V
DD
/RF
OUT
No Connection
V
DD
/RF
OUT
V
DD
/RF
OUT
V
DD
/RF
OUT
Paddle
4
1. Reference Application Note M513 for reel size information.
2. When ordering sample evaluation boards, choose a standard
frequency range indicated on page 4/5 or specify a desired
custom range. Custom requests may increase lead times.
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
1
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000035-09000P
GaN Wideband 90 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Typical Performance
5
: V
DD
= 50 V, I
DQ
= 200 mA, T
A
= 25°C
Parameter
Gain
Saturated Power (P
SAT
)
Power Gain at P
SAT
PAE @ P
SAT
30 MHz
25
100
22
75
1 GHz
21
98
20
65
2.5 GHz
15
90
15
55
3.5 GHz
13
85
11
52
Units
dB
W
dB
%
Rev. V3
5. Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on pages
4 and 5.
Electrical Specifications: Freq. = 1.6 GHz, T
A
= 25°C, V
DD
= +50 V, Z
0
= 50 Ω
Parameter
RF FUNCTIONAL TESTS
CW Output Power (P2.5 dB)
Pulsed Output Power (P2.5 dB)
100 µs and 10% Duty Cycle
Pulsed Power Gain (P2.5 dB)
Pulsed Drain Efficiency (P2.5 dB)
Load Mismatch Stability (P2.5 dB)
Load Mismatch Tolerance (P2.5 dB)
V
DD
= 28 V, I
DQ
= 200 mA
V
DD
= 50 V, I
DQ
= 200 mA
V
DD
= 50 V, I
DQ
= 200 mA
V
DD
= 50 V, I
DQ
= 200 mA
V
DD
= 50 V, I
DQ
= 200 mA
V
DD
= 50 V, I
DQ
= 200 mA
P
OUT
P
OUT
G
P
η
D
VSWR-S
VSWR-T
-
75
16
55
-
-
14
95
17.5
65
5:1
10:1
-
-
-
-
-
-
W
W
dB
%
-
-
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Electrical Characteristics: T
A
= 25°C
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
Test Conditions
Symbol
Min.
Typ.
Max.
Units
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 6 mA
V
DS
= 5 V, I
D
= 3000 mA
I
DS
V
GS (th)
G
M
-
-5
1.1
-
-3
-
6.0
-2
-
mA
V
S
V
DS
= 0 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
-
-
-
22
9.8
0.9
-
-
-
pF
pF
pF
MAGX-000035-09000P
GaN Wideband 90 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Absolute Maximum Ratings
6,7,8,9,10
Parameter
Input Power
Drain Supply Voltage, V
DD
Gate Supply Voltage, V
GG
Supply Current, I
DD
Power Dissipation, CW @ 85ºC
Power Dissipation (P
AVG
), Pulsed @ 85°C
Junction Temperature
11
Operating Temperature
Storage Temperature
6.
7.
8.
9.
10.
Rev. V3
Absolute Max.
P
OUT
- G
P
+ 2.5 dBm
+65 V
-8 V to 0 V
4500 mA
27 W
85 W
200°C
-40°C to +95°C
-65°C to +150°C
Exceeding any one or combination of these limits may cause permanent damage to this device.
M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits.
For saturated performance it is recommended that the sum of (3 * V
DD
+ abs (V
GG
)) < 175 V.
CW operation at V
DD
voltages above 28 V is not recommended.
Operating at nominal conditions with T
J
≤ 200°C will ensure MTTF > 1 x 10
6
hours. Junction temperature
directly affects device MTTF and should be kept as low as possible to maximize lifetime.
11. Junction Temperature (T
J
) = T
C
+
Ө
JC
* ((V * I) - (P
OUT
- P
IN
))
Typical CW thermal resistance (Ө
JC
) = 5.69°C/W
a) For T
C
= 79°C,
T
J
= 200°C @ 28 V, 1224 mA, P
OUT
= 15 W, P
IN
= 0.25 W
Typical transient thermal resistances:
b) 300 µs pulse, 10% duty cycle,
Ө
JC
= 0.96°C/W
For T
C
= 79°C,
T
J
= 131°C @ 50 V, 2500 mA, P
OUT
= 74 W, P
IN
= 2 W
c) 1 ms pulse, 10% duty cycle,
Ө
JC
= 1.38°C/W
For T
C
= 80°C,
T
J
= 173°C @ 50 V, 2780 mA, P
OUT
= 74 W, P
IN
= 2 W
d) 1 ms pulse, 10% duty cycle,
Ө
JC
= 1.35°C/W
For T
C
= 80°C,
T
J
= 173°C @ 50 V, 3160 mA, P
OUT
= 93 W, P
IN
= 4 W
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000035-09000P
GaN Wideband 90 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Evaluation Board Details and Recommended Tuning Solutions
GND
Rev. V3
V
D
Parts measured on evaluation board (8-mils thick
RO4003C). Electrical and thermal ground is
provided using copper-filled via hole array (not
pictured), and evaluation board is mounted to a
metal plate.
Matching is provided using lumped elements as
shown at left. Recommended tuning solutions for 2
frequency ranges are detailed in the parts list
below.
RF
IN
RF
OUT
Bias Sequencing
Turning the device ON
1. Set V
G
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
D
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
V
G
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
G
down to V
P.
3. Decrease V
D
down to 0 V.
4. Turn off V
G
.
Parts List
(N/A = not applicable for this tuning solution)
Part
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
R1
R2
R3
L1
L2
L3
L4
L5
Frequency = 1.2 - 1.4 GHz
0505, 56 pF, ±5%, 250 V, ATC
0603, 4.7 pF, ±0.1 pF, 250 V, ATC
0603, 10 pF, ±5%, 250 V, ATC
0505, 15 pF, ±5%, 250 V, ATC
N/A
N/A
0805, 1000 pF, 100 V, 5%, AVX
0505, 56 pF, ±5%, 250 V, ATC
0505, 2.2 pF, ±0.1 pF, 250 V, ATC
0505, 1.0 pF, ±0.1 pF, 250 V, ATC
0505, 91 pF, ±5%, 250 V, ATC
0805, 1000 pF, 100 V, 5%, AVX
1210, 1 µF, 100 V, 20%, ATC
12
Ω,
0805, 5%
1.0
Ω,
0603, 5%
0.33
Ω,
0603, 5%
0603 CS, 1.6 nH (1.8 nH)
0402 HP, 2.7 nH
0402 HP, 2.7 nH
0402 PA, 1.9 nH (0402 HP, 2.0 nH)
0402 PA, 1.9 nH (0402 HP, 2.0 nH)
Frequency = 1.6 GHz
0505, 36 pF, ±5%, 250 V, ATC
N/A
N/A
N/A
0505, 8.2 pF, ±0.1 pF, 250 V, ATC
0505, 100 pF, ±10%, 200 V, ATC
0805, 1000 pF, 100 V, 5%, AVX
0505, 36 pF, ±5%, 250 V, ATC
0505, 3.0 pF, ±0.1 pF, 250 V, ATC
N/A
0505, 36 pF, ±5%, 250 V, ATC
0805, 1000 pF, 100 V, 5%, AVX
1210, 1 µF, 100 V, 20%, ATC
12
Ω,
0805, 5%
1.0
Ω,
0603, 5%
1.0
Ω,
0603, 5%
N/A
N/A
N/A
N/A
N/A
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000035-09000P
GaN Wideband 90 W Pulsed Transistor in Plastic Package
provided using a copper-filled via hole array (not
pictured), and evaluation board is mounted to a
metal plate.
Matching is provided using lumped elements.
Recommended tuning solutions for 1 frequency
range is detailed in the parts list below.
Parts List
Part
C1
C2, C3
C4, C5, C6, C7
C8, C9
C10, C11
C12, C13, C14, C15
C16, C17
Value
0.7 pF
1.1 pF
2.0 pF
100 pF
6.8 pF
1.3 pF
0.3 pF
0.5 pF
12 pF
100 pF
10 nF
1 nH
12 nH
12 nH
2.2 nH
200
Ω
MAGX-000035-
09000P
Case Style
0402
0402
0402
0402
0402
0402
0402
0402
0603
0603
0603
0402
0402
0603
0402
0402
3x6 mm DFN
Bias Sequencing
Turning the device ON
1. Set V
G
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
D
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
C18
C19
C20, C21
C22
L1, L2, L3, L10, L11
L6, L7
L8, L9
L4, L5
R1, R2
T1
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
G
down to V
P.
3. Decrease V
D
down to 0 V.
4. Turn off V
G
.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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