BTA20 Series
20A TRIAC
S
Table 1: Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
(max)
Value
20
600 and 700
35 and 50
Unit
A
V
mA
Table 2: Order Codes
Part Numbers
BTA20-600BWRG
BTA20-600CWRG
BTA20-700BWRG
BTA20-700CWRG
Marking
BTA20-600BW
BTA20-600CW
BTA20-700BW
BTA20-700CW
DESCRIPTION
The
BTA20 BW/CW
triac family are high perform-
ance glass passivated chips technology.
The snubberless concept offer suppression of RC
network and it is suitable for application such as
phase control and static switching on inductive or
resistive load.
Thanks to their clip assembly technique, they
provide a superior performance in surge current
handling capabilities.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at
2500V
RMS
) complying with UL standards (File ref.:
E81734).
TO-220AB Insulated
A2
G
A1
Table 3: Absolute Maximum Ratings
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 500 mA dI
G
/dt = 1 A/µs
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
T
c
= 70°C
t = 10 ms
t = 8.3 ms
Value
20
210
200
200
20
100
V
DSM
/V
RSM
+ 100
4
16
T
j
= 125°C
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A
²
s
A/µs
V
A
V
W
°C
Repetitive
F = 50 Hz
T
j
= 125°C
Non repetitive
t
p
= 10 ms
t
p
= 20 µs
t
p
= 20 µs
T
j
= 25°C
T
j
= 125°C
V
DSM
/V
RSM
Non repetitive peak off-state voltage
I
GM
V
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak positive gate voltage
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
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BTA20 Series
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125°C
I
T
= 500 mA gate open
I - III
I
G
= 1.2 I
GT
II
I - II - III
dV/dt (2)
V
D
= 67 %V
DRM
gate open
T
j
= 125°C
T
j
= 125°C
Test Conditions
Quadrant
ALL
ALL
ALL
MIN.
MAX.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MIN.
TYP.
MIN.
75
50
90
-
750
500
36
18
BTA20
BW
2
50
1.5
0.2
50
-
-
80
500
250
22
11
V/µs
V/µs
mA
CW
1
35
Unit
mA
V
V
mA
V
D
= 12 V
R
L
= 33
Ω
(dV/dt)c (2) (dI/dt)c = 20 A/ms
Table 5: Static Characteristics
Symbol
V
TM
(2)
I
DRM
I
RRM
I
TM
= 28 A
V
DRM
= V
RRM
Test Conditions
t
p
= 380 µs
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
MAX.
MAX.
Value
1.70
10
3
Unit
V
µA
mA
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to case (DC)
Junction to ambient
Parameter
Value
2.1
°C/W
2.8
60
°C/W
Unit
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BTA20 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: Correlation between maximum RMS
power dissipation and maximum allowable
temperatures (Tamb and Tcase) for different
thermal resistances heatsink + contact
P(W)
30
R
th
= 0°C/W
P(W)
30
25
20
T
case
(°C)
65
75
R
th
= 0.5°C/W
25
α
= 180°
α
= 120°
20
15
10
180°
R
th
= 1.5°C/W
85
95
R
th
= 1°C/W
15
10
5
0
0
5
α
= 90°
α
= 60°
α
= 30°
105
115
α
α
5
I
T(RMS)
(A)
0
10
15
20
0
20
40
T
amb
(°C)
125
60
80
100
120
Figure 3: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
25
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1
α
= 180°
20
Z
th(j-c)
15
10
Z
th(j-a)
0.1
5
T
C
(°C)
0
0
10
20
30
40
50
60
70
80
90
100
110 120 130
0.01
1.E-3
t
p
(s)
1.E-2
1.E-1
1.E+0
1.E+1
1.E+2
5.E+2
Figure
5:
On-state
(maximum values)
I
TM
(A)
1000
T
j
max.
V
t0
= 1.04V
R
d
= 20 m
Ω
characteristics
Figure 6: Non repetitive surge peak on-state
current versus number of cycles
I
TSM
(A)
1000
t=20ms
100
One cycle
T
j
= T
j
max.
Non repetitive
T
j
initial=25°C
10
T
j
= 25°C.
1
1
2
V
TM
(V)
3
4
5
Number of cycles
100
1
10
100
1000
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BTA20 Series
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
I
TSM
(A), I
2
t (A
2
s)
1000
T
j
initial=25°C
Figure 8: Relative variation of gate trigger
current and holding current versus junction
temperature
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
TSM
1.5
I
GT
1.0
I
2
t
I
H
& I
L
0.5
t
p
(ms)
100
T
j
(°C)
1.00
10.00
0.01
0.10
0.0
-40 -30 -20 -10
0
10 20 30 40
50 60 70
80 90 100 110 120 130
Figure 9: Ordering Information Scheme
BT A 20 - 600 BW RG
Triac series
Insulation
A = insulated
Current
20 = 20A
Voltage
600 = 600V
700 = 700V
Sensitivity and type
BW = 50mA (max.)
CW = 35mA (max)
Packing mode
RG = Tube
Table 7: Product Selector
Part Numbers
BTA20-xxxBWRG
BTA20-xxxCWRG
Voltage (xxx)
600 V
X
X
700 V
X
X
Sensitivity
50 mA
35 mA
Type
Snubberless
Package
TO-220AB Ins.
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