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TGF2023-2-01_15

Description
6 Watt Discrete Power GaN on SiC HEMT
File Size2MB,22 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Download Datasheet View All

TGF2023-2-01_15 Overview

6 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-01
6 Watt Discrete Power GaN on SiC HEMT
Applications
Defense & Aerospace
Broadband Wireless
Product Features
Frequency Range: DC - 18 GHz
38 dBm Nominal P
SAT
at 3 GHz
71.6% Maximum PAE
18 dB Nominal Power Gain at 3 GHz
Bias: V
D
= 12 - 32 V, I
DQ
= 25 - 125 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-01 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2023-2-01 typically provides 37.7 dBm of
saturated output power with power gain of 20.7 dB at
3 GHz. The maximum power added efficiency is
71.6 % which makes the TGF2023-2-01 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Pad Configuration
Pad No.
1
2
Backside
Symbol
V
G
/ RF IN
V
D
/ RF OUT
Source / Ground
Ordering Information
Part
TGF2023-2-01
Datasheet: Rev C 09-27-13
© 2013 TriQuint
ECCN
EAR99
Description
6 Watt GaN HEMT
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Disclaimer: Subject to change without notice
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