TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Applications
•
Defense & Aerospace
•
Broadband Wireless
Product Features
•
•
•
•
•
•
•
Frequency Range: DC - 18 GHz
47.3 dBm Nominal P
SAT
at 3 GHz
69.5% Maximum PAE
19.8 dB Nominal Power Gain at 3 GHz
Bias: V
D
= 12 - 32 V, I
DQ
= 200 - 1000 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 2.48 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-10 is a discrete 10 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-10 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2023-2-10 typically provides 47.4 dBm of
saturated output power with power gain of 19.8 dB at 3
GHz. The maximum power added efficiency is 69.5 %
which makes the TGF2023-2-10 appropriate for high
efficiency applications.
Lead-free and RoHS compliant
Pad Configuration
Pad No.
1-8
9
Backside
Symbol
V
G
/ RF IN
V
D
/ RF OUT
Source / Ground
Ordering Information
Part
TGF2023-2-10
Datasheet: Rev C 09-27-13
© 2013 TriQuint
ECCN
3A001b.3.b
Description
50 Watt GaN HEMT
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Parameter
Drain to Gate Voltage (V
DG
)
Drain Voltage (V
D
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation (P
D
)
CW Input Power (P
IN
)
Channel Temperature (T
CH
)
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Drain Voltage Range (V
D
)
Drain Quiescent Current (I
DQ
)
Drain Current Under RF Drive ( I
D
)
Gate Voltage (V
G
)
Channel Temperature (T
CH
)
Value
100 V
40 V
−50 to 0 V
10 A
−10 to 28 mA
See graph on pg.3.
+40 dBm
275°
C
320°
C
−65 to 150°
C
Value
12 – 32 V
0.5 A
3 A (Typ.)
−3.0 V (Typ.)
225° (Max.)
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
RF Characterization – Model Optimum Power Tune
Test conditions unless otherwise noted: T = 25° Bond wires not included.
C,
Parameter
Frequency (F)
Drain Voltage (V
D
)
Bias Current (I
DQ
)
Output P3dB (P
3dB
)
PAE @ P
3dB
(PAE
3dB
)
Gain @ P3dB (G
3dB
)
Parallel Resistance
(1)
Typical Value
3
12
200
43.3
53.3
13.3
(R
p
)
(C
p
)
22.0
0.36
(1)
Units
6
GHz
28
200
47.5
57.5
11.3
62.8
0.28
28
500
47.3
59.9
14.1
62.7
0.30
V
mA
dBm
%
dB
Ω∙mm
pF/mm
--
12
500
43.6
53.0
10.4
21.4
0.24
12
500
42.9
52
15.8
21.7
0.42
28
200
47.4
61.4
16.6
64.5
0.24
28
500
47.3
61.8
19.8
65.3
0.26
12
200
43.8
48.9
7.4
22.4
0.15
Parallel Capacitance
Load Reflection Coefficient
(2)
(Γ
L
)
0.40∠171° 0.41∠170° 0.18∠53° 0.19∠54° 0.39∠172° 0.42∠169° 0.30∠85° 0.32∠88°
Notes:
1. Large signal equivalent output network (normalized).
2.
Characteristic Impedance (Zo) = 5
Ω.
RF Characterization – Model Optimum Efficiency Tune
Test conditions unless otherwise noted: T = 25° Bond wires not included.
C,
Parameter
Frequency (F)
Drain Voltage (V
D
)
Bias Current (I
DQ
)
Output P3dB (P
3dB
)
PAE @ P
3dB
(PAE
3dB
)
Gain @ P3dB (G
3dB
)
Parallel Resistance
(1)
(R
p
)
(1)
Parallel Capacitance (C
p
)
Load Reflection Coefficient
(2)
(Γ
L
)
3
12
200
40.8
69.5
15.3
77.3
0.46
12
500
40.2
67.2
17.5
78.1
0.43
28
200
46.1
69.0
18.5
118.1
0.37
Typical Value
6
28
500
45.9
68.1
21.0
120.3
0.38
12
200
41.1
66.2
10.3
67.9
0.46
12
500
40.9
66.3
12.9
62.7
0.45
28
200
46.3
64.1
12.4
107.0
0.37
28
500
46.1
65.5
15.0
105.7
0.38
Units
GHz
V
mA
dBm
%
dB
Ω∙mm
pF/mm
--
0.33∠66° 0.32∠62° 0.46∠45° 0.47∠46° 0.47∠100° 0.44∠102° 0.54∠78° 0.54∠79°
Notes:
1. Large signal equivalent output network (normalized).
2. Characteristic Impedance (Zo) = 5
Ω.
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 2 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Thermal and Reliability Information
(1)
Parameter
Thermal Resistance,
θ
JC
(No RF Drive)
Channel Temperature, T
CH
(No RF Drive)
Median Lifetime, T
M
(No RF Drive)
Thermal Resistance,
θ
JC
(Under RF Drive)
Channel Temperature, T
CH
(Under RF Drive)
Median Lifetime, T
M
(Under RF Drive)
Test Conditions
V
D
= 28 V, I
D
= 1 A,
P
D
= 28 W, Tbaseplate = 70°
C
V
D
= 28 V, I
D
= 3A,
P
OUT
= 46.7 dBm, P
D
= 37.6 W,
Tbaseplate = 70°
C
Value
3.03
155
1.2 x 10^9
3.24
192
2.60 x 10^7
Units
ºC/W
°
C
Hrs
°
C/W
°
C
Hrs
Notes:
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Median Lifetime
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25
Thermal Resistance
4.5
Median Lifetime vs. Channel Temperature
Thermal Resistance (°
C/W)
θ
JC
vs. Baseplate Temperature
P
D
= 55 W
Median Lifetime, T
M
(Hours)
4.0
P
D
= 46 W
P
D
= 37 W
P
D
= 28 W
3.5
3.0
2.5
50
75
100 125 150 175 200 225 250 275
20
30
40
50
60
70
80
90
100
Channel Temperature, T
CH
(°C)
Baseplate Temperature (°
C)
Model Maximum Gain
35
30
Maximum Gain vs. Frequency
V
D
= 12 V
Temp.=+25°
C
35
30
Maximum Gain vs. Frequency
V
D
= 28 V
Temp.=+25°
C
Maximum Gain (dB)
25
20
15
10
5
0
0
5
10
15
20
25
30
I
DQ
= 500 mA
I
DQ
= 200 mA
Maximum Gain (dB)
25
20
15
10
5
0
0
5
10
15
20
25
30
I
DQ
= 500 mA
I
DQ
= 200 mA
Frequency (GHz)
Frequency (GHz)
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 3 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Simulated signal: 10% pulses. Bond wires not included.
Load Pull
Model 3dB compression performance at 3GHz, 12V, 200mA, 25
°
C
Γ
s = 0.66
∠
Zo = 5
Ω
Load Pull
Model 3dB compression performance at 3GHz, 12V, 500mA, 25
°
C
Max Model Power is 42.9dBm
at
Γ
l = 0.41
∠
170
°
Max Model PAE is 67.2%
at
Γ
l = 0.32
∠
62
°
Max Measured G3dB is 18.7dB
at
Γ
l = 0.64
∠
93
°
1.4
111
°
0.6
17.75
Max Model Power is 43.3dBm
at
Γ
l = 0.4
∠
171
°
Max Model PAE is 69.5%
at
Γ
l = 0.33
∠
66
°
Max Measured G3dB is 17.8dB
at
Γ
l = 0.78
∠
97
°
1.4
1
1
0.9
0.9
1.2
1.2
0.8
0.8
0.7
0.7
1.6
1.6
0.6
Γ
s = 0.66
∠
111
°
Zo = 5
Ω
0.
4
0.5
0.5
0.
4
18.7
0.3
17.05
0.3
16.41
0.2
0.2
18.17
17.68
69.4
39.94
17.24
15.84
67.21
62.22
53.53 57.67
49.76
42.93
1.8
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2
3
0
0.1
14.83
64.3
14.39
43.28
0.1
0.2
0.3
0.4
0.5
40.49
41.76
1.2
1
0.1
40.07
42.11
0.8
0.9
1
59.6
0.6
0.7
42.48
13.99
0.8
0.9
41.09
1.4
1.6
41.36
1.2
40.69
1.4
1.6
1.8
55.4
51.5
13.63
0
2
48
13.3
13
12.73
-0.1
-0.1
- 0.2
P3dB
PAE3dB
G3dB
- 0.2
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 3GHz, 28V, 200mA, 25
°
C
1
Load Pull
Model 3dB compression performance at 3GHz, 28V, 500mA, 25
°
C
1
Γ
s = 0.84
∠
Zo = 5
Ω
114
°
Max Model Power is 47.4dBm
at
Γ
l = 0.18
∠
53
°
Max Model PAE is 69%
at
Γ
l = 0.46
∠
45
°
Max Measured G3dB is 21.6dB
at
Γ
l = 0.86
∠
58
°
2
Γ
s = 0.84
∠
Zo = 5
Ω
114
°
Max Model Power is 47.3dBm
at
Γ
l = 0.19
∠
54
°
Max Model PAE is 68.1%
at
Γ
l = 0.47
∠
46
°
Max Measured G3dB is 23.3dB
at
Γ
l = 0.75
∠
69
°
2
21.5
23.29
20.64
19.85
19.14
68.95
18.49
10
9
8
7
5
22.07
21.53
21.05
68.06
20.61
20.21
19.84
19.51
19.21
20
6
17.35
46.61
47.44
64.07
59.63
1.8
7
8
9
10
20
2
3
4
5
6
45.85
45.17
44.54
47.25
63.79
46.63
46.06
18.93
18.68
18.45
1
59.9
56.35
53.13
50.2
1.4
1.2
1.6
1.8
7
8
9
10
20
2
3
4
5
6
0.6
0.7
0.8
0.9
1.2
1.4
1.6
0.6
0.7
0.8
55.58
-20
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 4 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
-7
-8
-9
-10
-7
-8
-9
-10
P3dB
PAE3dB
G3dB
P3dB
PAE3dB
G3dB
-20
51.9
48.55
0.9
1
20
45.54
10
9
8
7
17.89
6
5
4
3
22.65
3
0.9
0.9
1.2
1.2
4
3
0.8
0.8
1.4
1.4
1.6
1.8
1.6
1.8
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Simulated signal: 10% pulses. Bond wires not included.
Load Pull
Model 3dB compression performance at 6GHz, 12V, 200mA, 25
°
C
1
Load Pull
Model 3dB compression performance at 6GHz, 12V, 500mA, 25
°
C
1
Γ
s = 0.78
∠
155
°
Zo = 5
Ω
Max Model Power is 43.8dBm
at
Γ
l = 0.39
∠
172
°
Max Model PAE is 66.2%
at
Γ
l = 0.47
∠
100
°
Max Measured G3dB is 10.9dB
at
Γ
l = 0.69
∠
88
°
1.4
Γ
s = 0.78
∠
155
°
Zo = 5
Ω
Max Model Power is 43.6dBm
at
Γ
l = 0.42
∠
169
°
Max Model PAE is 66.3%
at
Γ
l = 0.44
∠
102
°
Max Measured G3dB is 13.3dB
at
Γ
l = 0.65
∠
95
°
1.4
0.9
0.9
1.2
1.2
0.8
0.8
0.7
0.7
1.6
1.6
0.6
0.6
0.5
0.5
0.
4
10.94
0.
4
13.29
10.33
9.779
9.276
8.819
8.402
8.023
7.678
7.364
7.078
6.817
43.83
0.2
0.3
0.4
0.5
0.6
66.2
12.76
66.2
12.28
11.84
11.44
61.6
11.08
10.75
10.45
10.17
43.55
9.923
9.696
0.4
61.9
57.4
40.55
53.6
0.7
42.89
0.8
0.9
1
42.04
1.2
41.26
1.4
1.6
1.8
0.2
0.3
2
3
58
0.6
0.7
42.63
0.8
0.9
41.79
1.2
1
41.03
1.4
40.34
1.6
1.8
2
3
0.5
50.2
47
44.1
54.4
51.1
48.1
P3dB
PAE3dB
G3dB
P3dB
PAE3dB
G3dB
Load Pull
Model 3dB compression performance at 6GHz, 28V, 200mA, 25
°
C
1
Load Pull
Model 3dB compression performance at 6GHz, 28V, 500mA, 25
°
C
1
Γ
s = 0.79
∠
Zo = 5
Ω
153
°
0.6
Max Model Power is 47.5dBm
at
Γ
l = 0.3
∠
85
°
Max Model PAE is 64.2%
at
Γ
l = 0.54
∠
78
°
Max Measured G3dB is 12.9dB
at
Γ
l = 0.72
∠
70
°
1.4
Γ
s = 0.79
∠
Zo = 5
Ω
153
°
0.6
Max Model Power is 47.3dBm
at
Γ
l = 0.32
∠
88
°
Max Model PAE is 65.5%
at
Γ
l = 0.54
∠
79
°
Max Measured G3dB is 15.3dB
at
Γ
l = 0.7
∠
71
°
1.4
0.9
0.9
1.2
1.2
0.8
0.8
0.7
0.7
1.6
1.6
0.5
0.5
0.
4
12.8
43.65
44.7
12
45.31
64.12
45.97
11.2
58.75
10.6
9.92
9.35
8.82
8.35
53.87
49.42
45.38
41.69
38.34
35.28
32.51
47.51
46.7
0.
4
15.3
14.5
65.47
13.8
60.11
13.2
12.6
12
11.5
11.1
55.23
50.79
46.75
43.07
39.72
36.67
47.3
46.44
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.2
1.4
1.6
1.8
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.2
1.4
1.6
1.8
45.65
1
1
2
3
2
44.94
44.29
43.7
P3dB
PAE3dB
G3dB
P3dB
PAE3dB
G3dB
Datasheet: Rev C 09-27-13
© 2013 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
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