TGA4043
Q Band Power Amplifier
Key Features
•
•
•
•
•
•
Frequency Range: 40-45 GHz
29 dBm Nominal Pout @ P1dB
10 dB Nominal Gain
0.25 um pHEMT Technology
Bias 7V @ 500 mA
Chip Dimensions 3.08 mm x 3.14 x 0.10 mm
(0.121 x 0.124 x 0.004 in)
Primary Applications
•
•
•
Point to Point Radio
Point to Multipoint Radio
Military Communications
Product Description
The TriQuint TGA4043 is a compact High
Power Amplifier MMIC for Q-band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
power pHEMT production process.
The TGA4043 provides a nominal 28
dBm of output power at 1 dB gain
compression from 40-45 GHz with a small
signal gain of 10 dB.
The part is ideally suited for low cost
emerging markets such as Point-to-Point
Radio and Point-to-Multi Point
Communications.
The TGA4043 is 100% DC and RF tested
on-wafer to ensure performance
compliance.
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 500mA
Datasheet subject to change without notice
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2009 © Rev -
1
TGA4043
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
V
+
V
-
I
+
| I
G
|
P
IN
P
D
T
CH
T
STG
1/
2/
3/
4/
PARAMETER
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5V TO 0V
960 mA
56 mA
27 dBm
7.5 W
200 °C
320 °C
-65 to 150 °C
2/
2/, 3/
4/, 5/
2/
NOTES
2/
These ratings represent the maximum operable values for this device.
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed P
D
.
When operated at this power dissipation with a base plate temperature of 70 °C, the median
life is 7.3E3 hours.
Junction operating temperature will directly affect the device median time to failure (Tm). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
These ratings apply to each individual FET.
5/
TABLE II
DC PROBE TEST
(T
A
= 25 °C, Nominal)
SYMBOL
I
dss, Q1
G
m, Q1
V
p, Q1,2, 3-6, 7, 8, 9-12
V
BVGD, Q1,2
V
BVGS, Q1
PARAMETER
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage Gate-
Drain
Breakdown Voltage Gate-
Source
MINIMUM
40
88
-1.5
-30
-30
MAXIMUM
188
212
-0.5
-8
-8
UNIT
mA
mS
V
V
V
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2009 © Rev -
2
TGA4043
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
°C,
Nominal)
Vd = 7V, Id = 500 mA
SYMBOL
Gain
IRL
ORL
PARAMETER
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power @
1dB Gain
Compression
TEST
CONDITION
F = 40-45 GHz
F = 40-45 GHz
F = 40-45 GHz
F = 40-45 GHz
TYPICAL
LIMITS
10
14.5
12.5
29
dBm
UNITS
dB
dB
dB
P
1dB
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2009 © Rev -
3
TGA4043
TABLE IV
THERMAL INFORMATION
Parameter
θ
JC
Thermal Resistance
(channel to backside of
carrier)
Test Conditions
Vd = 7 V
I
D
= 500 mA
Pdiss = 3.5 W
T
CH
(°C)
130
θ
JC
(°C/W)
17.3
Tm
(HRS)
5.9 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
°C
baseplate temperature. Worst case condition with no RF applied,
100% of DC power is dissipated.
Median Lifetime (Tm) vs. Channel Temperature
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2009 © Rev -
4
TGA4043
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 500mA
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2009 © Rev -
5
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