UD3005
P-Ch 30V Fast Switching MOSFETs
General Description
The UD3005 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD3005 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BV
DSS
-30V
Applications
R
DS(ON)
15mΩ
ID
-45A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
TO252 Pin Configuration
Absolute Maximum Ratings
Rating
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
2
Single Pulse Avalanche Energy
Avalanche Current
Total Power Dissipation
4
Total Power Dissipation
4
3
1
10s
Steady State
-30
±25
-45
-30
Units
V
V
A
A
-15
-12
-150
273
-50
45
5
-55 to 150
-55 to 150
-9.6
-7.7
A
A
A
mJ
A
W
Continuous Drain Current, V
GS
@ -10V
1
2.0
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient (t
≤
10s)
Thermal Resistance Junction-Case
1
1
Typ.
---
---
---
Max.
62
25
2.8
Unit
℃/W
℃/W
℃/W
1
UD3005
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-30A
V
GS
=-4.5V , I
D
=-15A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25℃
V
DS
=-24V , V
GS
=0V , T
J
=55℃
V
GS
=±25V
, V
DS
=0V
V
DS
=-5V , I
D
=-30A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=-15V , V
GS
=-4.5V , I
D
=-15A
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω
I
D
=-15A
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.0232
12
20
-1.5
4.6
---
---
---
30
9
22
8.7
7.2
8
73.7
61.8
24.4
2215
310
237
Max.
---
---
15
25
-2.5
---
-1
-5
±100
---
18
30.8
12.2
10
16
132
123
48
3100
434
330
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=-25V , L=0.1mH , I
AS
=-24A
Min.
63
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,6
Diode Forward Voltage
2
1,6
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
I
F
=-15A , dI/dt=100A/µs ,
T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
19
9
Max.
-45
-150
-1
---
---
Unit
A
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-50A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UD3005
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
12
10
Fig.2 On-Resistance vs. G-S Voltage
V
DS
=-15V
8
-V
GS
Gate to Source Voltage (V)
-I
S
Source Current(A)
8
I
D
=-15A
6
T
J
=150℃
4
T
J
=25℃
4
2
0
0.00
0
0
9
0.25
0.50
0.75
1.00
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
18
27
36
45
Fig.3 Forward Characteristics of Reverse
1.5
2.0
Fig.4 Gate-charge Characteristics
1
0.5
0
-50
Normalized On Resistance
Normalized V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (℃ )
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
UD3005
P-Ch 30V Fast Switching MOSFETs
10000
F=1.0MHz
Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
5
9
13
17
21
25
-V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJC
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE
P
DM
T
ON
T
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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