UD4803
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The UD4803 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The UD4803 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BVDSS
40V
-40V
Applications
RDSON
26mΩ
40mΩ
ID
23A
-20A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
CCFL Back-light Inverter
TO252 Pin Configuration
Absolute Maximum Ratings
Rating
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
2
1
N-Ch
40
±20
23
18
46
28
17.8
25
-55 to 150
-55 to 150
P-Ch
-40
±20
-20
-16
-40
66
-27.2
31.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Single Pulse Avalanche Energy
3
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
62
5
Unit
℃/W
℃/W
1
UD4803
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=12A
V
GS
=4.5V , I
D
=10A
V
GS
=V
DS
, I
D
=250uA
V
DS
=32V , V
GS
=0V , T
J
=25℃
V
DS
=32V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=12A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=20V , V
GS
=4.5V , I
D
=12A
Min.
40
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=20V , V
GS
=10V , R
G
=3.3Ω
I
D
=1A
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.034
22
28
1.5
-4.56
---
---
---
8
2.6
5.5
1.25
2.5
8.9
2.2
41
2.7
593
76
56
Max.
---
---
26
35
2.5
---
1
5
±100
---
5.2
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=10A
Min.
9
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
23
46
1.2
Unit
A
A
V
Diode Forward Voltage
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=17.8A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UD4803
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-8A
V
GS
=-4.5V , I
D
=-4A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-32V , V
GS
=0V , T
J
=25℃
V
DS
=-32V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=-5V , I
D
=-8A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=-20V , V
GS
=-4.5V , I
D
=-12A
Min.
-40
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω,
I
D
=-1A
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.012
32
52
-1.6
4.32
---
---
---
12.6
13
9
2.54
3.1
19.2
12.8
48.6
4.6
1004
108
80
Max.
---
---
40
65
-2.5
---
1
5
±100
---
16
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=-25V , L=0.1mH , I
AS
=-15A
Min.
20
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
-20
-40
-1
Unit
A
A
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-27.2A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3
UD4803
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
12
40
I
D
=12A
V
GS
=10V
V
GS
=7V
35
10
I
D
Drain Current (A)
6
V
GS
=4.5V
4
V
GS
=3V
2
0
0
R
DSON
(mΩ)
8
V
GS
=5V
30
25
20
V
DS
Drain-to-Source Voltage (V)
0.5
1
1.5
2
2
4
V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
12
Fig.2 On-Resistance vs. G-S Voltage
10
V
DS
=20V
8
V
GS
Gate to Source Voltage (V)
8
I
D
=12A
I
S
Source Current(A)
6
T
J
=150℃
4
T
J
=25℃
4
2
0
0.00
0
0
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
4
8
12
16
Fig.3 Forward Characteristics of Reverse
1.8
Fig.4 Gate-Charge Characteristics
2.0
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
1.7
1.4
Normalized V
GS(th)
1.1
0.8
0.5
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
4
UD4803
N-Ch and P-Ch Fast Switching MOSFETs
1000
F=1.0MHz
Ciss
Capacitance (pF)
100
10us
10
100us
100
Coss
Crss
I
D
(A)
1
10ms
100ms
DC
T
C
=25℃
Single Pulse
10
1
5
9
13
17
21
25
0
0.1
1
10
100
V
DS
Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
1
Normalized Thermal Response (Rthjc)
DUTY=0.5
0.3
Fig.8 Safe Operating Area
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
Ton
T
D = Ton/T
Tj peak = TC + PDM x Rthjc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
5
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