TGA2612-SM
6 - 12 GHz GaN LNA
Applications
Commercial and Military Radar
Communications
Product Features
Frequency Range: 6 – 12 GHz
NF: 2 dB
P1dB: 19 dBm
OTOI: 28 dBm
Small Signal Gain: 22 dB
Return Loss: >7 dB
Bias: V
D
= 10 V, I
DQ
= 100 mA, V
G
= -2.3 V Typical
Package Dimensions: 4 x 4 x 0.85 mm
Functional Block Diagram
General Description
TriQuint’s TGA2612-SM is a packaged broadband Low
Noise Amplifier fabricated on TriQuint’s TQGaN25
0.25um GaN on SiC process. Covering 6–12 GHz, the
TGA2612-SM typically provides >23 dM small signal
gain, 19 dBm P1dB, and 27 dBm OTOI with <2 dB of
Noise Figure.
In addition to the high electrical
performance, this GaN amplifier also provides a high
level of input power robustness. Able to survive up to
2W of input power without performance degradation,
TriQuint’s TGA2612-SM provides flexibility regarding
receive chain protection resulting in lower costs and
reduced board space.
The TGA2612-SM is available in a surface mount 20-
lead 4x4mm QFN. It is ideally suited for both radar and
communications applications.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2612-SM is ideally
suited for both military and commercial radar and
communications applications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
Pad Configuration
Pad No.
1, 2, 4-9, 11, 12, 14,
15, 17-20
3
10
13
16
Symbol
N/C
RF
IN
V
G
RF
OUT
V
D
Ordering Information
Part
TGA2612-SM
ECCN
EAR99
Description
6 – 12 GHz GaN LNA
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Disclaimer: Subject to change without notice
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TGA2612-SM
6 - 12 GHz GaN LNA
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation, 85 °C (P
DISS
)
Input Power, CW, 50 Ω, (P
IN
)
Channel temperature (T
CH
)
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Value
Parameter
Drain Voltage (V
D
)
Drain Current (I
DQ
)
Gate Voltage (V
G
)
Temperature (T
BASE
)
Value
10 V
100 mA
-2.3 V Typical
-40 to 85 °C
40 V
-5 to 0 V
300 mA
-1 to 7 mA
6W
33 dBm
275 °C
260 °C
-55 to 150 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed overall operating
conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25
0
C, V
D
= 10 V, I
DQ
= 100 mA, V
G
= -2.3 V Typical
Parameter
Operation Frequency Range
Small Signal Gain
Return Loss
Noise Figure
Output Power at 1 dB Gain Compression
Output Power at P
IN
= 10 dBm
Output TOI
Gain Temperature Coefficient
Noise Figure Temperature Coefficient
Min
6
Typical
22
>7
2
19
25
28
-0.05
0.01
Max
12
Units
GHz
dB
dB
dB
dBm
dBm
dBm
dB/°C
dB/°C
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 2 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2612-SM
6 - 12 GHz GaN LNA
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
(1)
Channel Temperature, T
CH
(Under RF)
Median Lifetime (T
M
)
Test Conditions
Value
Units
ºC/W
°C
Hrs
17
CW
T
baseplate
= 85 °C, V
D
= 10 V, I
DQ
= 100 mA,
112
I
D_Drive
= 180 mA, P
OUT
= 25 dBm,
P
IN
= 10dBm, Freq = 11GHz, P
DISS
= 1.6W 1.8 x 10^11
Notes:
1. Thermal resistance measured at back of package.
Median Lifetime
Test Conditions: V
D
= 40 V; Failure Criteria is 10% reduction in I
D_MAX
19
Thermal Resistance vs. P
DISS
T
BASE
= 85
0
C, CW
2.0
1.9
1.8
P
DISS
vs. Frequency vs. T
BASE
CW, P
IN
= 10 dBm
Power Dissipation (W)
18
1.7
1.6
1.5
1.4
1.3
+85°C
R
JC
(C/W)
17
16
1.2
1.1
+25°C
−40°C
15
0.5
1.0
1.5
2.0
2.5
3.0
1.0
5
6
7
8
9
10
11
12
13
P
DISS
(W)
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 3 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2612-SM
6 - 12 GHz GaN LNA
Typical Performance: Small Signal
Conditions unless otherwise specified: V
D
= 10 V, I
DQ
= 100 mA, V
G
= -2.3 V Typical
Noise Figure vs. Freq. vs. Temperature
-40 °C
25 °C
85 °C
4.0
3.5
3.0
Noise Figure (dB)
2.5
2.0
1.5
1.0
0.5
0.0
5
6
7
8
9
10
11
12
13
Frequency (GHz)
29
Gain vs. Frequency vs. Temperature
85 °C
29
Gain vs. Frequency vs. V
D
25 °C
26
-40 °C
26
S21 (dB)
S21 (dB)
23
23
20V
18V
16V
14V
12V
10V
8V
20
20
17
17
Temp = 25 °C
14
5
6
7
8
9
10
11
12
13
14
5
6
7
8
9
10
11
12
13
Frequency (GHz)
Frequency (GHz)
0
-3
-6
Input Return Loss vs. Frequency vs. Temp.
0
-3
-6
-9
Output Return Loss vs. Frequency vs. Temp.
-9
S11 (dB)
-15
-18
-21
85 °C
25 °C
-40 °C
S22 (dB)
-12
-12
-15
85 °C
25 °C
-40 °C
-18
-21
-24
-27
-30
-24
-27
-30
5
6
7
8
9
10
11
12
13
5
6
7
8
9
10
11
12
13
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 4 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2612-SM
6 - 12 GHz GaN LNA
Typical Performance Large Signal
Performance:
Conditions unless otherwise specified: V
D
= 10 V, II
DQ
= 100 mA, V
G
= -2.3 V Typical
Conditions unless otherwise specified: V
D
= 10 V,
DQ
= 125 mA, V
G
= -2.3 V Typical
30
P
SAT
vs. Frequency vs. V
D
30
P
SAT
vs. Frequency vs. Temp.
27
27
P
SAT
(dBm)
24
P
SAT
(dBm)
24
85 °C
21
8V
10 V
12 V
21
25 °C
-40 °C
18
P
IN
= 10 dBm, Temp = 25°C
18
P
IN
= 10 dBm
15
5
6
7
8
9
10
11
12
13
15
5
6
7
8
9
10
11
12
13
Frequency (GHz)
Frequency (GHz)
30
Output Power vs. Input Power vs. Freq.
6 GHz
30
Output Power vs. Input Power vs. Temp.
Freq = 10GHz
25
8 GHz
25
Output Power (dBm)
20
Output Power (dBm)
10 GHz
12 GHz
20
15
15
85 °C
25 °C
-40 °C
10
Temp = 25 °C
10
5
-12
-9
-6
-3
0
3
6
9
12
15
18
5
-12
-9
-6
-3
0
3
6
9
12
15
18
Input Power (dBm)
Input Power (dBm)
25
P1dB vs. Frequency vs. V
D
Temp = 25 °C
25
P1dB vs. Frequency vs. Temperature
23
23
P1dB (dBm)
21
P1dB (dBm)
12 V
21
19
19
17
10 V
8V
17
85 °C
25 °C
-40 °C
15
6
7
8
9
10
11
12
15
6
7
8
9
10
11
12
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com