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TGA2612-SM

Description
6 to 12 GHz GaN LNA
File Size560KB,14 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
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TGA2612-SM Overview

6 to 12 GHz GaN LNA

TGA2612-SM
6 - 12 GHz GaN LNA
Applications
Commercial and Military Radar
Communications
Product Features
Frequency Range: 6 – 12 GHz
NF: 2 dB
P1dB: 19 dBm
OTOI: 28 dBm
Small Signal Gain: 22 dB
Return Loss: >7 dB
Bias: V
D
= 10 V, I
DQ
= 100 mA, V
G
= -2.3 V Typical
Package Dimensions: 4 x 4 x 0.85 mm
Functional Block Diagram
General Description
TriQuint’s TGA2612-SM is a packaged broadband Low
Noise Amplifier fabricated on TriQuint’s TQGaN25
0.25um GaN on SiC process. Covering 6–12 GHz, the
TGA2612-SM typically provides >23 dM small signal
gain, 19 dBm P1dB, and 27 dBm OTOI with <2 dB of
Noise Figure.
In addition to the high electrical
performance, this GaN amplifier also provides a high
level of input power robustness. Able to survive up to
2W of input power without performance degradation,
TriQuint’s TGA2612-SM provides flexibility regarding
receive chain protection resulting in lower costs and
reduced board space.
The TGA2612-SM is available in a surface mount 20-
lead 4x4mm QFN. It is ideally suited for both radar and
communications applications.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2612-SM is ideally
suited for both military and commercial radar and
communications applications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
Pad Configuration
Pad No.
1, 2, 4-9, 11, 12, 14,
15, 17-20
3
10
13
16
Symbol
N/C
RF
IN
V
G
RF
OUT
V
D
Ordering Information
Part
TGA2612-SM
ECCN
EAR99
Description
6 – 12 GHz GaN LNA
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com

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