SSM3055L
Elektronische Bauelemente
2.8A , 60V , R
DS(ON)
100 mΩ
Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SSM3055L utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SSM3055L is universally used for all commercial-industrial
applications.
A
M
SOT-223
4
Top View
CB
1
2
3
FEATURES
Simple Drive Requirement
Small Package Outline
K
E
L
D
F
G
H
J
MARKING
3055L
= Date code
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
-
0.10
-
-
0.25
0.35
-
-
2.30 REF.
2.90
3.10
PACKAGE INFORMATION
Package
SOT-223
MPQ
2.5K
Leader Size
13 inch
1
G
TOP VIEW
D
24
3
S
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@10V
Pulsed Drain Current
Power Dissipation
3
2
1
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
I
DM
T
A
=25°
C
P
D
T
j
, T
stg
I
D
Ratings
60
±20
2.8
Unit
V
V
A
2.3
12
1.5
-55~150
A
W
°
C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
Maximum Junction to Case
1
1
R
θJA
R
θJC
85
48
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jul-2013 Rev. A
Page 1 of 4
SSM3055L
Elektronische Bauelemente
2.8A , 60V , R
DS(ON)
100 mΩ
Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Drain-Source Leakage
Current
T
J
=25°
C
T
J
=55°
C
2
BV
DSS
V
GS(th)
I
GSS
I
DSS
60
1
-
-
-
-
-
-
-
-
-
-
5
1.68
1.9
1.6
7.2
25
14.4
511
38
25
-
2.5
V
V
nA
µA
V
GS
=0, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
GS
=
±
20V
V
DS
=48V, V
GS
=0
V
DS
=48V, V
GS
=0
±
100
1
5
100
110
-
-
-
-
-
-
-
-
-
-
Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (‘’Miller’’)Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
m
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2A
V
DS
=48V,
V
GS
=4.5V,
I
D
=2A
V
DD
=30V,
V
GS
=10V,
R
G
=3.3 ,
I
D
=2A
V
GS
=0,
V
DS
=15V,
f=1.0MHz
nC
nS
pF
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
2
1.4
V
SD
I
S
I
SM
T
RR
Q
RR
-
-
-
-
-
-
-
-
9.7
5.8
1.2
2.8
12
-
-
V
A
nS
nC
I
S
=1A, V
GS
=0
V
G
=V
D
=0, Force Current
I
S
=2A, dI/dt=100A/µs
V
GS
=0
Continuous Source Current
Pulsed Source Current
2.4
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Surface mounted on a 1 inch2 FR4 board with 2OZ copper, t≦10sec., 125° /W when mounted on Min. copper pad.
C
2. The data tested by pulsed , pulse width≦300µs, duty cycle≦2%
3. The power dissipation is limited by 150 ° junc tion temperature
C
4. The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jul-2013 Rev. A
Page 2 of 4
SSM3055L
Elektronische Bauelemente
2.8A , 60V , R
DS(ON)
100 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jul-2013 Rev. A
Page 3 of 4
SSM3055L
Elektronische Bauelemente
2.8A , 60V , R
DS(ON)
100 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jul-2013 Rev. A
Page 4 of 4
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