SSP7432N
Elektronische Bauelemente
24 A, 30 V, R
DS(ON)
4.9 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8PP
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R
DS(on)
and to ensure
minimal power loss and heat dissipation. Typical applications are
DC-DC converters and power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
SOP-8PP
MPQ
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
L
Millimeter
Min.
Max.
0.85
1.00
5.3 BSC.
0.15
0.25
3.8 BCS.
6.05 BCS.
0.03
0.30
4.35 BCS.
0.40
0.70
REF.
θ
b
c
d
e
f
g
Millimeter
Min.
Max.
0
°
10
°
5.2 BCS
0.30
0.50
1.27BSC
5.55 BCS.
0.10
0.40
1.2 BCS.
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
30
±12
24
20
60
2.9
5.0
3.2
-55 ~ 150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t≦10 sec
Steady-State
R
θJA
25
65
°C / W
Notes
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Sep-2013 Rev. B
Page 1 of 2
SSP7432N
Elektronische Bauelemente
24 A, 30 V, R
DS(ON)
4.9 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min
Static
1
-
-
-
30
-
-
-
-
Typ
-
-
-
-
-
-
-
90
0.7
Max
-
100
1
5
-
4.9
5.9
-
-
Unit
V
nA
μA
A
mΩ
S
V
Test conditions
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 0V, V
GS
= 12V
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
=55°C
V
DS
= 5V, V
GS
= 10V
V
GS
= 4.5V, I
D
= 24A
V
GS
= 2.5V, I
D
= 21A
V
DS
= 15V,
,
I
D
= 24A
I
S
= 2.3A, V
GS
= 0V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes
1.
2.
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
25
6
9
20
13
82
43
-
-
-
-
-
-
-
nS
nC
I
D
= 24A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 1A, V
DD
= 15V
V
GEN
= 10V
R
L
= 6Ω
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Sep-2013 Rev. B
Page 2 of 2
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