ECG003B-G
InGap HBT Gain Block
Applications
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
General Purpose Wireless
0
G0
EC
3B
-G
SOT-89 Package Style
Product Features
DC – 6 GHz
+24 dBm P1dB at 1 GHz
+39 dBm OIP3 at 1 GHz
20 dB Gain at 1 GHz
3.6 dB Noise Figure
Internally Matched to 50
Lead-free / green / RoHS-Compliant SOT-89 Package
Functional Block Diagram
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / V
CC
General Description
The ECG003B-G is a general-purpose buffer amplifier
that offers high dynamic range in a low-cost surface-
mount package. At 1000 MHz, the ECG003B-G typically
provides 20 dB of gain, +39 dBm Output IP3, and
+24 dBm P1dB.
The ECG003B-G consists of Darlington pair amplifiers
using the high reliability InGaP / GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The device is ideal for wireless applications and is
available in a low-cost, surface-mount lead-
free / green / RoHS-compliant SOT-89 package. All
devices are 100% RF and DC tested.
This broadband MMIC amplifier can be directly applied
to various current and next generation wireless
technologies. In addition, the ECG003B-G will satisfy
general amplification requirements in the DC to 6 GHz
frequency range such as CATV and mobile wireless.
Pin Configuration
Pin No.
1
2
3
Backside Paddle
Label
RF IN
GND
RF OUT / V
CC
GND
Ordering Information
Part No.
ECG003B-G
ECG003B-PCB
Description
InGaP HBT Gain Block
500 – 6000 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Datasheet: Rev B 12/04/14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
ECG003B-G
InGap HBT Gain Block
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power (Continuous)
Device Current (I
D
)
Recommended Operating Conditions
Parameter
T
CASE
Junction Temperature
Rating
−65 to 150 °C
+10 dBm
160 mA
Min
−40
Typ
Max
+85
+160
Units
°C
°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
V
SUPPLY
= +9 V, R
BIAS
= 16 Ω, 50 Ω System
Parameter
Operational Bandwidth
Gain
Output P1dB
Output IP3
Noise Figure
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Device Voltage
Device Current
Output Mismatch w/o Spurs
Thermal Resistance
Conditions
Min
DC
Typ
20
+24
+39
3.5
19
15
10
+23
+36
3.6
+7.2
110
10:1
86
Max
6000
Units
MHz
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
V
mA
VSWR
°C / W
Freq.=1000 MHz
OIP3 Pout=+11 dBm / Tone, Δf= 1 MHz
18
Freq.=2000 MHz
OIP3 Pout=+11 dBm / Tone, Δf= 1 MHz
+34
+6.7
+7.6
Typical Device RF Performance
(1)
Test conditions unless otherwise noted:
V
SUPPLY
= +9 V, R
BIAS
= 16 Ω, I
CC
= 110 mA (typ.), 50 Ω System
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
100
21
20
15
+24.4
+38
3.9
500
21
19
14
+24.4
+39
3.6
900
20.4
18
13
+24
+39
3.5
Typical
1900
19
16
10
+23
+36
3.6
2140
18.7
15
10
+22.5
+35
3.7
2400
18.2
13
8
+20.5
+34
3.7
3500
17.4
12
7
+18.7
+31
4.2
5800
14
6
3
+12
Units
MHz
dB
dB
dB
dBm
dBm
dB
Notes:
1.
Gain and return loss values presented above, and in the plots of the following section, are measured at the device level.
Application specific performance values will differ in accordance with external components selected for the desired frequency
band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4.
2.
Pout= +11 dBm / tone, 1 MHz tone spacing.
Datasheet: Rev B 12/04/14
© 2014 TriQuint
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2 of 7
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Disclaimer: Subject to change without notice
www.triquint.com
ECG003B-G
InGap HBT Gain Block
Typical Device RF Performance
Test conditions unless otherwise noted:
V
SUPPLY
= +9 V, R
BIAS
= 16 Ω, I
CC
= 110 mA (typ.), 50 Ω System
22
Gain vs. Frequency
+85°C
0
Return Loss vs. Frequency
Temp.=+25°C
140
Temp.=+25°C
I
CC
vs. V
DE
120
20
+25°C
-5
|S22|
|S11|
|S11|, |S22| (dB)
−40°C
100
Gain (dB)
I
CC
(mA)
0
1
2
3
4
5
6
-10
80
60
40
18
-15
16
-20
20
14
500
1000
1500
2000
2500
3000
-25
0
0.0
2.0
4.0
6.0
8.0
10.0
Frequency (MHz)
Frequency (GHz)
V
DE
(V)
30
P1dB vs. Frequency
+85°C
45
OIP3 vs. Frequency
4.0
Noise Figure vs. Frequency
25
+25°C
−40°C
40
+85°C
3.5
+25°C
−40°C
P1dB (dBm)
OIP3 (dBm)
20
35
NF (dB)
3.0
2.5
15
30
2.0
Temp.=+25°C
10
500
1000
1500
2000
2500
3000
25
500
1000
1500
2000
2500
3000
1.5
500
1000
1500
2000
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
S-Parameters
Test Conditions: V
DEVICE
= +7.2 V, I
CC
= 110 mA, T = 25 °C, Calibrated to device leads
Freq (MHz)
50
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11 (dB)
−20.36
−19.29
−17.78
−16.23
−14.71
−13.16
−12.14
−11.24
−10.30
−9.20
−7.76
−6.63
−5.54
S11 (ang)
−0.18
−24.13
−51.50
−75.63
−98.28
−118.71
−139.91
−161.53
174.59
147.71
120.30
92.76
70.28
S21 (dB)
20.46
20.19
19.84
19.40
19.06
18.65
18.23
17.77
17.32
16.71
15.97
14.85
13.49
S21 (ang)
177.69
157.68
136.88
117.06
97.71
78.13
59.26
40.27
20.70
0.41
−19.87
−40.81
−59.45
S12 (dB)
−23.19
−23.08
−22.93
−22.61
−22.16
−21.61
−20.91
−20.11
−19.35
−18.62
−18.16
−18.05
−18.34
S12 (ang)
−0.38
−2.33
−4.52
−7.13
−9.76
−13.40
−17.67
−23.92
−31.44
−41.28
−52.98
−66.03
−79.15
S22 (dB)
−13.95
−13.44
−12.45
−11.26
−9.96
−8.82
−7.63
−6.59
−5.32
−4.19
−3.10
−2.28
−1.78
S22 (ang)
−2.86
−35.26
−68.47
−97.26
−123.04
−145.90
−167.85
171.00
150.44
128.81
107.78
87.09
67.70
Notes:
1. Device S-parameters are available for download off of the website at: www.triquint.com
Datasheet: Rev B 12/04/14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
ECG003B-G
InGap HBT Gain Block
ECG003B-PCB Evaluation Board
J3
R3
J4
J3
Vsupply
J4 GND
R3
Bias
Resistor
C4
Bypass Capacitor
C3
C3
L1
U1
C1
R1
R2
C2
L1
J1
RF
Input
C1
R1
18
0.018 uF
RF
Choke
R2
4.7
C2
J2
RF
Output
1
U1
3
2, Backside
Paddle
DC Blocking
Capacitor
DC Blocking
Capacitor
Notes:
1. See Evaluation Board PCB Information section for material and stack-up.
Bill of Material: ECG003B-PCB
Ref. Des.
U1
L1
C1, C2
C3
C4
R1
R2
R3
R
BIAS
Values for Various V
SUPPLY
V
SUPPLY
(V
CC
)
R3 (Ω)
Component Size
9
16
2010
10
25
2512
12
44
2512
Value
n/a
39 nH
56 pF
0.018
F
Do Not Place
18 Ω
4.7 Ω
16 Ω
Description
ECG003B-G
Wirewound Inductor, 0603
Chip Capacitor, 0603
Chip Capacitor, 0603
Chip Resistor, 0603
Chip Resistor, 0603
1% Tolerance, 2010
Component Values for Specific Frequencies
Frequency (MHz)
L1
C1, C2, C3
50
820 nH
.018 uF
500
220 nH
1000 pF
900
68 nH
100 pF
1900
27 nH
68 pF
2200
22 nH
68 pF
2500
18 nH
56 pF
3500
15 nH
39 pF
Performance Plots − ECG003B-PCB
Test conditions unless otherwise noted:
V
SUPPLY
= +9 V, R
BIAS
= 16 Ω, I
CC
= 110 mA (typ.), 50 Ω System
Return Loss
0
S11 & S22 (dB)
-10
-20
S11
-30
0
1
2
3
4
S22
Frequency (GHz)
Datasheet: Rev B 12/04/14
© 2014 TriQuint
-
4 of 7
-
Disclaimer: Subject to change without notice
www.triquint.com
ECG003B-G
InGap HBT Gain Block
Pin Configuration and Description
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / V
CC
Pin No.
1
3
Label
RF IN
RF OUT / V
CC
Description
RF input, matched to 50 ohms. External DC Block is required.
RF output / DC supply, matched to 50 ohms. External DC Block, bias choke,
and dropping resistor is required.
RF/DC ground. Use recommended via pattern to minimize inductance and
thermal resistance. See PCB Mounting Pattern for suggested footprint.
2, Backside Paddle GND Paddle
Evaluation Board PCB Information
TriQuint PCB 1069136 Material and Stack-up
1 oz. Cu top layer
0.014"
0.062" ± 0.006"
Finished Board
Thickness
Nelco N-4000-13
1 oz. Cu inner layer
Core
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
50 Ohm Line Dimensions: Width=0.028"
Spacing=0.036"
Datasheet: Rev B 12/04/14
© 2014 TriQuint
-
5 of 7
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Disclaimer: Subject to change without notice
www.triquint.com
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